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    N-CHANNEL, 75V, 50A Search Results

    N-CHANNEL, 75V, 50A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
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    N-CHANNEL, 75V, 50A Price and Stock

    Taoglas Antenna Solutions ADFGP.50A.07.0100C

    ADFGP.50A Embedded Active GNSS Dual Stacked Patch Antenna, I-PEX MHF®IU.FL
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    Onlinecomponents.com ADFGP.50A.07.0100C 94
    • 1 $64.24
    • 10 $60.56
    • 100 $56.23
    • 1000 $55.39
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    OptiFuse FSG-50A

    Fuse, 5AG (13/32 x 1 1/2 in.), Fast-Acting, 32V, 50A | OptiFuse FSG-50A
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    Onlinecomponents.com FSG-50A
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    • 10 $2.74
    • 100 $1.6
    • 1000 $1.21
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    OptiFuse TFLF-50A

    Automotive Fuse Link, 32V, 50A | OptiFuse TFLF-50A
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    • 10 $4.2
    • 100 $2.44
    • 1000 $1.78
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    OptiFuse APX-50A

    Automotive Fuse, Maxi Blade, 32V, 50A | OptiFuse APX-50A
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    • 10 $2.325
    • 100 $1.394
    • 1000 $1.043
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    OptiFuse TFLB-50A

    Automotive Fuse Link, 32V, 50A | OptiFuse TFLB-50A
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    Onlinecomponents.com TFLB-50A
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    • 100 $2.81
    • 1000 $2.05
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    Find more N-CHANNEL, 75V, 50A price and stock on Findchips.com

    N-CHANNEL, 75V, 50A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDP023N08

    Abstract: FDP023N08B
    Text: FDP023N08B_F102 N-Channel PowerTrench MOSFET 75V, 242A, 2.35mΩ Features Description • RDS on = 1.96mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS037N08B N-Channel PowerTrench MOSFET 75V, 100A, 3.7mΩ Features Description • RDS on = 3.01mΩ (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDMS037N08B FDMS037N08B PDF

    M05 marking diode

    Abstract: FDD16AN08A0 alternator diode 50a 82660 TR VT-O41
    Text: FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • 42V Automotive Load Control • Qg(tot) = 31nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		FDD16AN08A0 O-252AA M05 marking diode FDD16AN08A0 alternator diode 50a 82660 TR VT-O41 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • 42V Automotive Load Control • Qg(tot) = 31nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		FDD16AN08A0 O-252AA PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD16AN08A0_F085 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • 42V Automotive Load Control • Qg(tot) = 31nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		FDD16AN08A0 O-252AA DD16AN08A0 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • DC-DC converters and Off-line UPS • Qg(tot) = 31nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		FDD16AN08A0 O-252AA 52oC/W) FDD16AN08A0 PDF

    FDD16AN08A0

    Abstract: FDD16AN08A0-F085 DD16A
    Text: FDD16AN08A0_F085 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • 42V Automotive Load Control • Qg(tot) = 31nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		FDD16AN08A0 O-252AA DD16AN08A0 FDD16AN08A0-F085 DD16A PDF

    IXTP170N075T2

    Abstract: ixtp170n075 T170N IXTA170N075T2 170N075T2
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75


    Original     		IXTA170N075T2 IXTP170N075T2 O-263 O-220 170N075T2 IXTP170N075T2 ixtp170n075 T170N IXTA170N075T2 PDF

    IXTP230N075T2

    Abstract: 230N075T2 IXTA230N075T2 IXTP230 ixta230n TF230
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA230N075T2 IXTP230N075T2 VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75


    Original     		IXTA230N075T2 IXTP230N075T2 O-263 230N075T2 IXTP230N075T2 IXTA230N075T2 IXTP230 ixta230n TF230 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA230N075T2 IXTP230N075T2 VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75


    Original     		IXTA230N075T2 IXTP230N075T2 O-263 230N075T2 PDF

    FDB045AN

    Abstract: FDB045AN08A0 diode marking 53
    Text: FDB045AN08A0_F085 N-Channel PowerTrench MOSFET 75V, 80A, 4.5m: Features Applications • rDS ON = 3.9m: (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		FDB045AN08A0 O-263AB FDB045AN diode marking 53 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFA230N075T2-7 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (7-lead) Symbol Test Conditions VDSS TJ = 25°C to 175°C


    Original     		IXFA230N075T2-7 O-263 230N075T2 2-26-10-C PDF

    T230N

    Abstract: IXFA230N075T2 IXFA230N075T2-7
    Text: Advance Technical Information IXFA230N075T2-7 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (7-lead) Symbol Test Conditions VDSS TJ = 25°C to 175°C


    Original     		IXFA230N075T2-7 O-263 230N075T2 2-26-10-C T230N IXFA230N075T2 IXFA230N075T2-7 PDF

    FDB045AN08A0

    Abstract: No abstract text available
    Text: tm FDB045AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.5mΩ Features Applications • rDS ON = 3.9mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		FDB045AN08A0 O-263AB FDB045AN08A0 PDF

    Untitled

    Abstract: No abstract text available
    Text: tm FDB045AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.5mΩ Features Applications • rDS ON = 3.9mΩ (Typ.), VGS = 10V, ID = 80A • Starter / Alternator Systems • Qg(tot) = 92nC (Typ.), VGS = 10V • Electronic Power Steering Systems • Low Miller Charge


    Original     		FDB045AN08A0 FDB045AN08A0 O-263AB PDF

    IXTA90N075T2

    Abstract: IXTP90N075T2
    Text: IXTA90N075T2 IXTP90N075T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier = 75V = 90A Ω ≤ 10mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75


    Original     		IXTA90N075T2 IXTP90N075T2 O-263 90N075T2 03-06-08-B IXTA90N075T2 IXTP90N075T2 PDF

    FDB045AN08A0

    Abstract: FFDB045AN08A0T
    Text: FDB045AN08A0 N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mΩ Features Applications • r DS ON = 3.9mΩ (Typ.), V GS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		FDB045AN08A0 O-263AB FDB045AN08A0 FFDB045AN08A0T PDF

    IXFP230N075T2

    Abstract: IXFA230N075T2
    Text: IXFA230N075T2 IXFP230N075T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 75V = 230A Ω ≤ 4.2mΩ TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C


    Original     		IXFA230N075T2 IXFP230N075T2 O-263 230N075T2 2-26-10-C IXFP230N075T2 IXFA230N075T2 PDF

    Untitled

    Abstract: No abstract text available
    Text: TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFA230N075T2 IXFP230N075T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 75V = 230A Ω ≤ 4.2mΩ TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C


    Original     		IXFA230N075T2 IXFP230N075T2 O-263 230N075T2 2-26-10-C PDF

    FDP047AN08A0

    Abstract: alternator diode 50a
    Text: FDP047AN08A0 N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mΩ Features Applications • r DS ON = 4.0mΩ (Typ.), V GS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		FDP047AN08A0 O-220AB FDP047AN08A0 alternator diode 50a PDF

    Untitled

    Abstract: No abstract text available
    Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA90N075T2 IXTP90N075T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier = 75V = 90A Ω ≤ 10mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75


    Original     		IXTA90N075T2 IXTP90N075T2 O-263 90N075T2 03-06-08-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA0324A 2SK4065 N-Channel Power MOSFET http://onsemi.com 75V, 100A, 6mΩ, TO-263-2L Features • • ON-resistance RDS on 1=4.6mΩ (typ.) 4V drive • Input capacitance Ciss=12200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		ENA0324A 2SK4065 O-263-2L 12200pF PW10s, L200H, A0324-7/7 PDF

    all transistors equivalent cross reference

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE 4707 Dey Road Liverpool, N.Y. 13088 4300 315 701-6751 FEATURES: 75 Volt Motor Supply Voltage 10 Amp Output Switch Capability, All N-Channel MOSFET Output Bridge


    Original     		MIL-PRF-38534 100KHz MSK4300 all transistors equivalent cross reference PDF

    IXTP170N075T2

    Abstract: IXTA170N075T2 170N075T2
    Text: TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTA170N075T2 IXTP170N075T2 O-263 O-220 170N075T2 2-15-08-A IXTP170N075T2 IXTA170N075T2 PDF