Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KU310N10D TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,
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KU310N10D
Fig14.
Fig15.
Fig16.
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2SK1838
Abstract: No abstract text available
Text: 2SK1838 L , 2SK1838 S Silicon N Channel MOS FET Application 4 4 DPAK–1 High speed power switching 12 3 12 Features S Type • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC
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2SK1838
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2SJ234
Abstract: No abstract text available
Text: 2SJ234 L , 2SJ234 S Silicon P Channel MOS FET Application DPAK-1 DPAK High speed power switching Features 4 4 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source • Suitable for DC – DC convertor, motor drive,
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2SJ234
2SJ234
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Untitled
Abstract: No abstract text available
Text: 2SK2084 L , 2SK2084 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC
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2SK2084
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2SK2418
Abstract: No abstract text available
Text: 2SK2418 L , 2SK2418 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 • • • • Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC – DC
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2SK2418
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2SK2329
Abstract: 2SK23
Text: 2SK2329 L , 2SK2329 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 • • • • Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC – DC
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2SK2329
2SK23
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2SJ279
Abstract: 2SJ279S 2SJ279-S
Text: 2SJ279 L , 2SJ279 S Silicon P Channel MOS FET Application DPAK–1 4 High speed power switching 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC
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2SJ279
2SJ279S
2SJ279-S
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2SK2334
Abstract: No abstract text available
Text: 2SK2334 L , 2SK2334 S Silicon N Channel MOS FET Application DPAK–2 4 High speed power switching 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC
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2SK2334
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2SK2684
Abstract: 2SK2735 DPAK-2 PACKAGE Hitachi DSA00238 2SK273
Text: 2SK2735 L , 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2
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2SK2735
ADE-208-543
2SK2684
DPAK-2 PACKAGE
Hitachi DSA00238
2SK273
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2SJ319
Abstract: No abstract text available
Text: 2SJ319 L , 2SJ319 S Silicon P Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC – DC
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2SJ319
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2SJ245
Abstract: No abstract text available
Text: 2SJ245 L , 2SJ245 S SILICON P-CHANNEL MOS FET Application DPAK–1 4 High speed power switching 4 Features 1 2 3 Low on–resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC
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2SJ245
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2SK1949
Abstract: 2SK1949L
Text: 2SK1949 L , 2SK1949 S Silicon N Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features 12 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC
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2SK1949
2SK1949L
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2SJ387
Abstract: No abstract text available
Text: 2SJ387 L , 2SJ387 S Silicon P Channel MOS FET Application DPAK–2 High speed power switching 4 Features 4 12 • Low on–resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC – DC
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2SJ387
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2SJ333
Abstract: 2SJ333L
Text: 2SJ333 L , 2SJ333 S Silicon P-Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 • • • • Low on–resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V Source • Suitable for Switching regulator, DC – DC
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2SJ333
2SJ333L
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD5P06V TMOS V ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TM O S PO W ER FET P-Channel Enhancement-Mode Silicon Gate TM O S V is a n ew te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce area prod u ct a bo u t o n e -h a lf th a t of sta n d a rd M O SFE Ts. This
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MTD5P06V
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D15N06V
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD15N06V TMOS V Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device T M O S P O W E R FET 15 A M P E R E S 60 V O LTS N-Channel Enhancement-Mode Silicon Gate TM O S V is a n ew te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce area p rod u ct a b o u t o n e -h a lt th a t of sta n d ard M O SFETs. This
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2SK1335
Abstract: No abstract text available
Text: HITACHI 2SK1335 L , 2SK1335(S) @ îype S IL IC O N N -CH AN N EL M O S Typr FET HIGH S P E E D P O W E R S W IT C H IN G • FEATU RES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown 1. Cate • Suitable for Switching Regulator and
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2SK1335
Ta-25
rs-25
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2SK129
Abstract: 2SK1299 ID2K
Text: 2SK1299 C , 2SK1299(S Type © Type S ILIC O N N -CH A NN EL MOS FET • 4$ • { & * ft yt& ffio • X 4 t > • M i b M t i f r ' I 'Z •{&9.1Ïmm (A v rn m ^ m )' • f f l i â : *c — 9 V us V ÿ -i r , 'i K lE fij, ij U - , I. Gate 2.,4. Drain 3.
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2SK1299
VDS-10V*
VD5-10V,
L-15H
diF/dt-50A/
2SK129
ID2K
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2955V
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P ro d u c t Preview MTD2955V TMOS V Power Field Effect Transistor DPAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM TM O S V NjJSpj TM O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p rod u ct a bo u t o n e -h a lt th a t of sta n d a rd M O S FE Ts. This
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P ro d u c t P review MTD20N06V TMOS V Power Field Effect Transistor DPAK for Surface Mount T M O S P O W E R FET 20 A M P E R E S 6 0 V O LTS N-Channel Enhancement-Mode Silicon T M O S V is a n ew te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p rod u ct a bo u t o n e -h a lt th a t ot sta n d a rd M O S FE Ts. This
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4614 mosfet
Abstract: MOTOROLA 3055V 3055VL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD3055VL TM O S V P o w er Field E ffe c t T ran sisto r DPAK fo r S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0-18 OHM N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O S FE Ts. This
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0E-03
0E-02
0E-01
4614 mosfet
MOTOROLA 3055V
3055VL
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20N03
Abstract: 20n03h
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD20N03HDL HDTM O S E -FE T High D en sity P o w er FET DPAK fo r S u rfa c e M ount M o to ro la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS R DS on = 0-035 OHM
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12N06EZL
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 12N 06E ZL TMOS E-FET™ High Energy Power FET DPAK for Surface Mount or Insertion Mount TMOS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate If This a d va n ce d T M O S p o w e r F E T is d e sig n e d to w ithstan d high
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06EZL
12N06EZL
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2SK430
Abstract: 2SK430L 40VK
Text: 2 SK4 3 0 L 2 SK4 3 0 s SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITC H IN G PP H Type © Type 2,4 1. 2. 3. 4. h l G ate ! D rain ' / — ? > ' Source KV -i> ! Drai n Dimensions in mm Y K^ — •i > (DPAK) ABSOLUTE MAXIMUM RATINGS ( T a = i m K \s
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2SK430L
2SK430
2SK430Â
40VK
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