S-49534
Abstract: Si4539DY
Text: Si4539DY Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel N Channel 30 P Channel P-Channel –30 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 D1 D1
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Si4539DY
S-49534--Rev.
06-Oct-97
S-49534
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Si6544BDQ
Abstract: S-31251-Rev
Text: Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 FEATURES rDS(on) (W) ID (A) 0.032 @ VGS = 10 V 4.3 0.046 @ VGS = 4.5 V 3.7 0.043 @ VGS = - 10 V - 3.8 0.073 @ VGS = - 4.5 V
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Si6544BDQ
Si6544BDQ-T1
08-Apr-05
S-31251-Rev
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Untitled
Abstract: No abstract text available
Text: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel −30 30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 6.9 0.035 @ VGS = 4.5 V 5.8 0.032 @ VGS = −10 V −6.1 0.045 @ VGS = −4.5 V −5.1
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Si4542DY
Si4542DY-T1
18-Jul-08
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Si6544BDQ
Abstract: No abstract text available
Text: Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 FEATURES rDS(on) (W) ID (A) 0.032 @ VGS = 10 V 4.3 0.046 @ VGS = 4.5 V 3.7 0.043 @ VGS = - 10 V - 3.8 0.073 @ VGS = - 4.5 V
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Si6544BDQ
Si6544BDQ-T1
S-31251--Rev.
16-Jun-03
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Si3552DV
Abstract: Si3552DV-T1
Text: Si3552DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V 2.5 0.175 @ VGS = 4.5 V 2.0 0.200 @ VGS = - 10 V - 1.8 0.360 @ VGS = - 4.5 V - 1.2 TSOP-6
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Si3552DV
Si3552DV-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4539ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.9 0.053 @ VGS = 4.5 V 4.9 0.053 @ VGS = - 10 V - 4.9 0.090 @ VGS = - 4.5 V - 3.7 D1 S2 SO-8
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Si4539ADY
Si4539ADY-T1
18-Jul-08
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Si4532ADY
Abstract: Si4532ADY-T1
Text: Si4532ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.053 @ VGS = 10 V 4.9 0.075 @ VGS = 4.5 V 4.1 0.080 @ VGS = - 10 V - 3.9 0.135 @ VGS = - 4.5 V - 3.0 D1 S2 SO-8
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Si4532ADY
Si4532ADY-T1
S-31989--Rev.
13-Oct-03
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Si3552DV
Abstract: Si3552DV-T1
Text: Si3552DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V 2.5 0.175 @ VGS = 4.5 V 2.0 0.200 @ VGS = - 10 V - 1.8 0.360 @ VGS = - 4.5 V - 1.2 TSOP-6
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Si3552DV
Si3552DV-T1
S-31725--Rev.
18-Aug-03
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Si4532ADY
Abstract: Si4532ADY-T1
Text: Si4532ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.053 @ VGS = 10 V 4.9 0.075 @ VGS = 4.5 V 4.1 0.080 @ VGS = - 10 V - 3.9 0.135 @ VGS = - 4.5 V - 3.0 D1 S2 SO-8
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Si4532ADY
Si4532ADY-T1
08-Apr-05
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Si4539ADY
Abstract: Si4539ADY-T1
Text: Si4539ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.9 0.053 @ VGS = 4.5 V 4.9 0.053 @ VGS = - 10 V - 4.9 0.090 @ VGS = - 4.5 V - 3.7 D1 S2 SO-8
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Si4539ADY
Si4539ADY-T1
S-03951--Rev.
26-May-03
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72032
Abstract: Si3590DV
Text: Si3590DV New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 rDS(on) (W) ID (A) 0.077 @ VGS = 4.5 V 3 0.120 @ VGS = 2.5 V 2 0.170 @ VGS = -4.5 V -2 0.300 @ VGS = -2.5 V -1.2 D TrenchFETr Power MOSFET
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Si3590DV
S-21979--Rev.
04-Nov-02
72032
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KI4558DY
Abstract: Transistor Mosfet N-Ch 30V N- and P-Channel 30-V D-S MOSFET
Text: IC IC SMD Type N- and P-Channel 30-V D-S MOSFET KI4558DY PIN Configuration Absolute Maximum Ratings TA = 25 Symbol N-Channel P-Channel Unit Drain-Source Voltage Parameter VDS 30 -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current (TJ = 150 )* TA = 25
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KI4558DY
KI4558DY
Transistor Mosfet N-Ch 30V
N- and P-Channel 30-V D-S MOSFET
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Untitled
Abstract: No abstract text available
Text: SÌ6544DQ Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Rd s <o n ] (&) I d (A) 0.035 @ VGS= 10 v ±4.0 V D* (V) N-Channel 30 0.050 @ VGS = 4.5 V ±3.4 0.045 @ VGS = -1 0 V ±3.5 0.090 @ V gs = -4 .5 V ±2.5 a t -30 P-Channel Dl Q S2 P TSSOP-8 Di Si
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6544DQ
6544D
S-56944--
23-Nov-98
Si6544PQ
S-56944--Rev.
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Untitled
Abstract: No abstract text available
Text: Temic SÌ4532DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) N-Channel 30 P-Channel -30 rDS(on) (Q ) I d (A) 0.065 @ VGs = 10 V ±3.9 0.095 @ VGs = 4.5 V ±3.1 0.085 @ VGS = -10 V ±3.5 0.19 @ VGs = -4.5 V
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4532DY
S-49520--Rev.
18-Dec-96
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25S16
Abstract: No abstract text available
Text: SÌ4542DY - SNicönix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) N-Channel P-Channel r DS(ON) (-2) I d (A) 0.025 @ VGS = 10 V ± 6 .9 30 0.035 @ VGS = 4.5 V
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4542DY
S-56944--
ov-98
25S16
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25S16
Abstract: No abstract text available
Text: _ SÌ4542PY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Vos (V) N-Channel P-Channel flfW O N) (ß) l D (A) 0 .025 VGs = 10 V ±6.9 0.035 @ VGS = 4,5 V ±5.8 0,032® VGS = -1 0 V ±6.1 0.045 @ VGS = -4 .5 V ±5.1 30 -30
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4542PY
23-Nov-98
Si4542DY
S-56944--
25S16
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Si4558DY
Abstract: No abstract text available
Text: SÌ4558DY Vishay Sîliconix N- and P-Channel 30-V D-S MOSFET P R O D U C T SU M M ARY V d sO n N-Channel P-Channel R o s (on ) iß ) Id W 0.04 0 VGS = 10 V ±6 0.060 @ V q s = 4 .5 V ±4.B 30 0.040 @ VGs = “ 10 V ±6 0.070 @ V q S = “ 4-5 V ±4.4 -30
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4558DY
SI4558DY
S-56944--Rev.
23-Nov-98
Si4558DY
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Si6543DQ
Abstract: No abstract text available
Text: Temic SÌ6543DQ Se m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V u s (V ) N-Channel 30 P-Channel I d (A) r DS(on) ( ß ) 30 0.065 @ VGs = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 0.085 @ Vos = -10 V ±2.5 0.19 @ V(jS = -4.5 V
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OCR Scan
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6543DQ
150aC
S-49534--
06-Oct-97
06-0ct
Si6543DQ
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Untitled
Abstract: No abstract text available
Text: TEMIC SÌ4539DY Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) N-Channel 30 P-Channel 30 r DS(on)(^) I d (A) 0.037 @ VGs = 10 V 0.055 @ VGS = 4.5 V 0.053 @ Vgs - —10 V 0.095 @ VGS = -^.5 v ±5.8 ±4.7 ±4.9 ±3.6 Di
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4539DY
S-49534--Rev.
6-Oct-97
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Untitled
Abstract: No abstract text available
Text: TEMIC SÌ4558DY Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P-Channel 30 I d (A) ±6 ±4.8 ±6 ±4.4 r DS(on)(^) 0.040 @ VGs = 10 V 0.060 @ VGs = 4.5 V 0.040 @ VGS = -10V 0.070 @ VGS = -4.5 V S2 o \JZ S O -8
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4558DY
S-49534--Rev.
-Oct-97
06-Oct-97
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Untitled
Abstract: No abstract text available
Text: Temic SÌ6543DQ S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V d s (V) N-Channel 30 P-Channel I d (A) r DS(on) ( ß ) 30 0.065 @ VGs = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 0.085 @ VGs = -1 0 V ±2.5 0.19 @ VGs = -4-5 V
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OCR Scan
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6543DQ
S-47958--Rev.
15-Apr-96
TSSOP-8/-28
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Untitled
Abstract: No abstract text available
Text: Tem ic Si6543DQ Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS(V) N-Channel 30 P-Channel 30 rD S(on ) ( Q ) Id (A) 0.065 @ VGs = 10 V ±3.9 0.095 @ VGs = 4.5 V ±3.1 0.085 @ VGs = -10 V ±2.5 0.19 @ VGs = -4.5 V ±1.8 Di Q
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Si6543DQ
i6543D
S-49534â
06-Oct-97
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Untitled
Abstract: No abstract text available
Text: T e m ic SÌ4539DY Semiconductors Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V d s (V) N-Channel 30 P-Channel 30 r DS(on) (Q) 0.037 @ VGs= 10 V 0.055 @ VGS = 4.5 V 0.053 @ VGs = -10 V 0.095 @ VGs = -4-5 V I d (A) ±5.8 ±4.7 ±4.9 ±3.6
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4539DY
S-47958--Rev.
15-Apr-96
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Untitled
Abstract: No abstract text available
Text: SÌ4532DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) N-Channel P-Channel r DS(ON) I d (A) (-2) 0.065 @ VGS = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 30 0.085 @ VGS = —10 V ±3 .5 0.19 @ VGS = —4.5 V ±2 .5 -3 0 S2 Q Di
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4532DY
S-56944--
ov-93
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