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    N MOSFET LOW VGS Search Results

    N MOSFET LOW VGS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC156R0G3D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFM31PC276D0E3L Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFMJMPL226R0G5D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    N MOSFET LOW VGS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4N65L-TA3-T

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N65-N Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-N is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance


    Original     		4N65-N 4N65-N QW-R502-965 4N65L-TA3-T PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits • N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance Description  Fast Switching Speed This MOSFET has been designed to minimize the on-state


    Original     		2N7002A 200mA AEC-Q101 DS31360 PDF

    2N7002A-RTK/P

    Abstract: No abstract text available
    Text: 2N7002A Green N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits • N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance Description  Fast Switching Speed This MOSFET has been designed to minimize the on-state


    Original     		2N7002A 200mA AEC-Q101 DS31360 2N7002A-RTK/P PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN3033LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance • 20m @ VGS = 10V • 27m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		DMN3033LSD AEC-Q101 J-STD-020 DS31262 PDF

    k72 diode

    Abstract: No abstract text available
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C • Dual N-Channel MOSFET • Low On-Resistance 60V 7.5Ω @ VGS = 5V 0.23A • Low Gate Threshold Voltage • Low Input Capacitance Description


    Original     		2N7002DW DS30120 k72 diode PDF

    tc 971

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-N Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		4N60-N 4N60-N QW-R502-971. tc 971 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N65-N Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-N is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		4N65-N 4N65-N QW-R502-965. PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-N Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		4N60-N 4N60-N QW-R502-971 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN2040LTS N EW PRODU CT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		DMN2040LTS AEC-Q101 J-STD-020 DS31941 PDF

    N3033LD

    Abstract: No abstract text available
    Text: DMN3033LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance • 20mΩ @ VGS = 10V • 27mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		DMN3033LSD AEC-Q101 J-STD-020 MIL-STD-202, 072grams DS31262 N3033LD PDF

    2N7002-13-F

    Abstract: 2N7002Q-7-F mosfet 2n7002 2N7002-7-F
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original     		2N7002 210mA AEC-Q101 DS11303 2N7002-13-F 2N7002Q-7-F mosfet 2n7002 2N7002-7-F PDF

    FW502

    Abstract: EN8751
    Text: FW502 Ordering number : EN8751 SANYO Semiconductors DATA SHEET FW502 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, N-channel MOSFET and


    Original     		EN8751 FW502 FW502 FSS242 SB20-03P EN8751 PDF

    2N7002 equivalent

    Abstract: 2N7002Q-7-F
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original     		2N7002 210mA AEC-Q101 DS11303 2N7002 equivalent 2N7002Q-7-F PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		US6M11 R0039A PDF

    k72 diode

    Abstract: No abstract text available
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original     		2N7002 210mA AEC-Q101 DS11303 k72 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 93809A IRF7353D2 FETKYä MOSFET / Schottky Diode n n n n n n Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1


    Original     		3809A IRF7353D2 EIA-481 EIA-541. PDF

    Untitled

    Abstract: No abstract text available
    Text: LM2744 LM2744 Low Voltage N-Channel MOSFET Synchronous Buck Regulator Controller with External Reference Literature Number: SNVS292D LM2744 Low Voltage N-Channel MOSFET Synchronous Buck Regulator Controller with External Reference General Description Features


    Original     		LM2744 LM2744 SNVS292D PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UK4145 Preliminary Power MOSFET SWITCHING N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UK4145 is N-channel power MOSFET, suitable for high current switching applications. „ FEATURES * Low on-state resistance: RDS ON =10mΩ (Max.) @ VGS =10V, ID =42A


    Original     		UK4145 UK4145 5300pF UK4145L-TA3-T UK4145G-TA3-T UK4145L-TQ2-T UK4145G-TQ2-T UK4145L-TQ2-R UK4145G-TQ2-R O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG4822SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 30V 20mΩ @ VGS = 10V 10A • • • • • • • • • N-Channel MOSFET Low On-Resistance Low Input Capacitance


    Original     		DMG4822SSD AEC-Q101 DS35403 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		2N7002VC/VAC AEC-Q101 OT563 J-STD-020 DS30639 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG1024UV N EW PRODU CT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		DMG1024UV AEC-Q101 OT-563 J-STD-020 DS31974 PDF

    marking 340G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3400 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS ON and low gate charge. This device can be operated with 2.5V low gate voltage.


    Original     		UT3400 UT3400 UT3400G-AE3-R OT-23 QW-R502-371 marking 340G PDF

    4910n

    Abstract: PN channel MOSFET 10A
    Text: AF4910N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		AF4910N 4910N PN channel MOSFET 10A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UK4145 Preliminary Power MOSFET SWITCHING N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UK4145 is N-channel power MOSFET, suitable for high current switching applications. „ FEATURES * Low on-state resistance: RDS ON =10mΩ (Max.) @ VGS =10V, ID =42A


    Original     		UK4145 UK4145 5300pF UK4145L-TA3-T UK4145G-TA3-T O-220 QW-R502-364 PDF