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    N MOSFET 80V 180A Search Results

    N MOSFET 80V 180A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N MOSFET 80V 180A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AOB480L

    Abstract: AOT480L Mj333
    Text: AOT480L/AOB480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L & AOB480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This


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    PDF AOT480L/AOB480L AOT480L AOB480L O-263 AOT480L Mj333

    Untitled

    Abstract: No abstract text available
    Text: AOT480L/AOB480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L & AOB480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr. The result is outstanding efficiency with controlled switching behavior. This


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    PDF AOT480L/AOB480L AOT480L AOB480L O-263

    Untitled

    Abstract: No abstract text available
    Text: AOT480L/AOB480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L & AOB480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr. The result is outstanding efficiency with controlled switching behavior. This


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    PDF AOT480L/AOB480L AOT480L AOB480L O-263

    Untitled

    Abstract: No abstract text available
    Text: AOW480 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOW480 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is


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    PDF AOW480 AOW480 O-262

    aot480l

    Abstract: DM 7820
    Text: AOT480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is


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    PDF AOT480L AOT480L DM 7820

    Untitled

    Abstract: No abstract text available
    Text: AOT480L/AOB480L 80V N-Channel MOSFET TM SDMOS General Description Product Summary TM The AOT480L & AOB480L is fabricated with SDMOS trench technology that combines excellent RDS ON with low gate charge & low Qrr. The result is outstanding efficiency with controlled switching behavior. This universal


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    PDF AOT480L/AOB480L AOT480L AOB480L O-220 O-263 AAOT480L/AOB480L

    Untitled

    Abstract: No abstract text available
    Text: SSFP42N10 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 100V Simple Drive Requirement ID25 = 42A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability


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    PDF SSFP42N10 00A/s ISD22A di/dt180A/S TJ175 width300S;

    isotop mosfet 180A 100V

    Abstract: STE180NE10
    Text: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


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    PDF STE180NE10 isotop mosfet 180A 100V STE180NE10

    Ultrasonic welding circuit diagram

    Abstract: schematic diagram UPS Ultrasonic welding circuit STE180NE10 isotop mosfet 100V SWITCHING WELDING SCHEMATIC BY MOSFET
    Text: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


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    PDF STE180NE10 Ultrasonic welding circuit diagram schematic diagram UPS Ultrasonic welding circuit STE180NE10 isotop mosfet 100V SWITCHING WELDING SCHEMATIC BY MOSFET

    IRL540N equivalent

    Abstract: IRL540N
    Text: PD -95454 IRLI540NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V


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    PDF IRLI540NPbF O-220 IRL540N IRL540N equivalent

    Infineon technology roadmap for mosfet

    Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
    Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial


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    PDF KMZ60 KMA210 KMA215 Infineon technology roadmap for mosfet LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA

    ISL8240

    Abstract: ISL6840 ISL21060
    Text: P WERING INFRASTRUCTURE Telecom/Datacom, Wired Networks and Data Storage P WERING INFRASTRUCTURE The increased amount of data and video all of which can be configured using Intersil’s being transmitted via the cloud has placed PowerNavigator — the industry’s most


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    PDF LC-113 ISL8240 ISL6840 ISL21060

    IRL540N

    Abstract: No abstract text available
    Text: PD -95454 IRLI540NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V


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    PDF IRLI540NPbF O-220 IRL540N

    Untitled

    Abstract: No abstract text available
    Text: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier


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    PDF 91503D IRFP150N O-247 O-247AC

    IRFP150N

    Abstract: IRF1310N TO-247AC Package Mosfet IRFP150N 4.5v to 100v input regulator
    Text: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier


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    PDF 91503D IRFP150N O-247 O-247AC IRFP150N IRF1310N TO-247AC Package Mosfet IRFP150N 4.5v to 100v input regulator

    Untitled

    Abstract: No abstract text available
    Text: PD -95454 IRLI540NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V


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    PDF IRLI540NPbF O-220

    N mosfet 250v 600A

    Abstract: No abstract text available
    Text: Ihr Spezialist für Mess- und Prüfgeräte Programmable DC Electronic Load MODEL 63200 SERIES Key Features • Power Rating : 2600W, 5200W, 6500W, 10000W, 10400W, 14500W, 15600W ■ Voltage range : 0 ~ 80V/0 ~ 600V/0 ~ 1000V ■ Current range : Up to 1000A


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    PDF 0000W, 0400W, 4500W, 5600W 00V/0 20kHz 63200-E-201408-1000 N mosfet 250v 600A

    IRFP150N

    Abstract: IRFP150N International Rectifier IRF1310N 4.5v to 100v input regulator Mosfet IRFP150N 91503D
    Text: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier


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    PDF 91503D IRFP150N O-247 O-247AC IRFP150N IRFP150N International Rectifier IRF1310N 4.5v to 100v input regulator Mosfet IRFP150N 91503D

    IRF1310N

    Abstract: IRF1310n equivalent 4.5V to 100V input regulator
    Text: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier


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    PDF IRFI1310NPbF O-220 I840G IRF1310N IRF1310n equivalent 4.5V to 100V input regulator

    IRFI1310N

    Abstract: irfi1310 IRF1310N 4.5v to 100v input regulator
    Text: PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.036Ω G Fifth Generation HEXFETs from International Rectifier


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    PDF IRFI1310N O-220 IRFI1310N irfi1310 IRF1310N 4.5v to 100v input regulator

    IRF1310N

    Abstract: IRFP150N IRFP150N International Rectifier 4.5v to 100v input regulator
    Text: PD - 9.1503B IRFP150N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier


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    PDF 1503B IRFP150N O-247 IRF1310N IRFP150N IRFP150N International Rectifier 4.5v to 100v input regulator

    IRF1310N

    Abstract: IRFI1310N 4.5v to 100v input regulator
    Text: PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.036Ω G Fifth Generation HEXFETs from International Rectifier


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    PDF IRFI1310N O-220 IRF1310N IRFI1310N 4.5v to 100v input regulator

    Untitled

    Abstract: No abstract text available
    Text: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier


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    PDF IRFI1310NPbF O-220 I840G

    IRF1310N

    Abstract: 4.5V to 100V input regulator
    Text: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier


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    PDF IRFI1310NPbF O-220 I840G IRF1310N 4.5V to 100V input regulator