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    N MOSFET 100V 500A Search Results

    N MOSFET 100V 500A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N MOSFET 100V 500A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AOT292L/AOB292L 100V N-Channel MOSFET General Description Product Summary The AOT292L/AOB292L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 100V 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)


    Original     		PDF AOT292L/AOB292L AOT292L/AOB292L O-263

    Untitled

    Abstract: No abstract text available
    Text: AOT292L/AOB292L 100V N-Channel MOSFET General Description Product Summary The AOT292L/AOB292L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 100V 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)


    Original     		PDF AOT292L/AOB292L AOT292L/AOB292L O-263

    Untitled

    Abstract: No abstract text available
    Text: AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary The AOT296L/AOB296L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 100V 70A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)


    Original     		PDF AOT296L/AOB296L AOT296L/AOB296L O-263

    Untitled

    Abstract: No abstract text available
    Text: AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary The AOT296L/AOB296L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 100V 70A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)


    Original     		PDF AOT296L/AOB296L AOT296L/AOB296L O-263

    N2NF10

    Abstract: marking codes N2NF10 transistors sot-223 n2nf STN2NF10 JESD97 N2NF10 SOT223 ST MARKING 175 SOT
    Text: STN2NF10 N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type VDSS RDS on ID STN2NF10 100V < 0.26Ω 2.4A 2 Description 1 This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor


    Original     		PDF STN2NF10 OT-223 N2NF10 N2NF10 marking codes N2NF10 transistors sot-223 n2nf STN2NF10 JESD97 N2NF10 SOT223 ST MARKING 175 SOT

    Untitled

    Abstract: No abstract text available
    Text: AOL1482 100V N-Channel MOSFET General Description Product Summary The AOL1482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AOL1482 AOL1482

    Untitled

    Abstract: No abstract text available
    Text: AON2290 100V N-Channel MOSFET General Description Product Summary The AON2290 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AON2290 AON2290 Junction-to-100

    Untitled

    Abstract: No abstract text available
    Text: AON2290 100V N-Channel MOSFET General Description Product Summary The AON2290 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AON2290 AON2290 Junction-to-Ambie100

    Untitled

    Abstract: No abstract text available
    Text: AOD4286/AOI4286 100V N-Channel MOSFET General Description Product Summary The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized


    Original     		PDF AOD4286/AOI4286 AOD4286, AOI4286 O-251A AOD4286

    AOL1482

    Abstract: N mosfet 100v 500A
    Text: AOL1482 100V N-Channel MOSFET General Description Product Summary The AOL1482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		PDF AOL1482 AOL1482 N mosfet 100v 500A

    Untitled

    Abstract: No abstract text available
    Text: AOW2918 100V N-Channel MOSFET General Description Product Summary The AOW2918 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of


    Original     		PDF AOW2918 AOW2918

    Untitled

    Abstract: No abstract text available
    Text: AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary The AOT2916L & AOTF2916L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due


    Original     		PDF AOT2916L/AOTF2916L AOT2916L AOTF2916L O-220 O-220F

    Untitled

    Abstract: No abstract text available
    Text: AON6482 100V N-Channel MOSFET General Description Product Summary The AON6482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		PDF AON6482 AON6482

    Untitled

    Abstract: No abstract text available
    Text: AON6486 100V N-Channel MOSFET General Description Product Summary The AON6486 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		PDF AON6486 AON6486

    Untitled

    Abstract: No abstract text available
    Text: AON7296 100V N-Channel MOSFET General Description Product Summary The AON7296 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


    Original     		PDF AON7296 AON7296

    AOT2910l

    Abstract: No abstract text available
    Text: AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are


    Original     		PDF AOT2910L/AOB2910L/AOTF2910L AOT2910L AOB2910L AOTF2910L O-220 O-263 O-220F L/AOB2910L/AOTF2910L AOT2910l

    AOW2918

    Abstract: No abstract text available
    Text: AOW2918 100V N-Channel MOSFET General Description Product Summary The AOW2918 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of


    Original     		PDF AOW2918 AOW2918 O-262

    Untitled

    Abstract: No abstract text available
    Text: AO4286 100V N-Channel MOSFET General Description Product Summary The AO4286 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


    Original     		PDF AO4286 AO4286

    Untitled

    Abstract: No abstract text available
    Text: AOL1482 100V N-Channel MOSFET General Description Product Summary The AOL1482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		PDF AOL1482 AOL1482

    Untitled

    Abstract: No abstract text available
    Text: AON6292 100V N-Channel MOSFET General Description Product Summary The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


    Original     		PDF AON6292 AON6292

    Untitled

    Abstract: No abstract text available
    Text: AOD2910 100V N-Channel MOSFET General Description Product Summary The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


    Original     		PDF AOD2910 AOD2910 19ABCDEF

    AON6482

    Abstract: No abstract text available
    Text: AON6482 100V N-Channel MOSFET General Description Product Summary The AON6482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		PDF AON6482 AON6482

    AO4482L

    Abstract: ao4482
    Text: AO4482L 100V N-Channel MOSFET General Description Product Summary The AO4482L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		PDF AO4482L AO4482L ao4482

    AO4286

    Abstract: No abstract text available
    Text: AO4286 100V N-Channel MOSFET General Description Product Summary The AO4286 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


    Original     		PDF AO4286 AO4286