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    N CH MOSFET Search Results

    N CH MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    N CH MOSFET Price and Stock

    Nexperia 2N7002P,215

    MOSFETs 2N7002P/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002P,215 Reel 1,638,000 3,000
    • 1 -
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    • 10000 $0.0207
    		Buy Now

    Nexperia 2N7002,215

    MOSFETs 2N7002/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002,215 Reel 9,339,000 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.0297
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    Nexperia BSS138P,215

    MOSFETs 60V N-CHANNEL 360MA TRENCH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSS138P,215 Reel 39,000 3,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.0223
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    Nexperia BSS84AK,215

    MOSFETs 50V P-CHANNEL 180MA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSS84AK,215 Reel 18,000 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.018
    		Buy Now

    Nexperia 2N7002/HAMR

    MOSFETs 60V N-CHANNEL 300MA TRENCH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002/HAMR Reel 8,316,000 3,000
    • 1 -
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    • 10000 $0.0228
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    Find more N CH MOSFET price and stock on Findchips.com

    N CH MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SPP80P06PIN-ND

    Abstract: BSS84P-L6327 BSS138N-L6327 IPD06N03LAG BSC042N03LSG IPD060N03LG BSS138N L6327 BSS123L6327 BSS138N SPP15P10PIN-ND
    Text: Mosfets Cont. OptiMOS 2 Package Type ® Vds (V) TO-220AB N-CH 25 30 TO-220 N-CH 100 600 TO-220-3 N-CH 100 TO-251 N-CH 25 TO-262AB N-CH 25 D2-PAK N-CH 25 25 TO-252 N-CH 30 D-PAK N-CH 25 Bent up Leads DSO-8 N-CH 30 SUPERSO8 N-CH 30 25 TDSON-8 N-CH 30 25


    Original     		PDF O-220AB O-220 O-220-3 O-251 O-262AB O-252 O-263 SPB80P06P SPB10N10L SPB80N10L SPP80P06PIN-ND BSS84P-L6327 BSS138N-L6327 IPD06N03LAG BSC042N03LSG IPD060N03LG BSS138N L6327 BSS123L6327 BSS138N SPP15P10PIN-ND

    sot-363 n-channel mosfet

    Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
    Text: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel


    Original     		PDF CMKDM3590 CMKDM7590 CMKDM3575 OT-363 CMKDM3590: CMKDM7590: CMKDM3575: RATI150 CMKDM7590 sot-363 n-channel mosfet sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 Dual P-Channel mosfet sot-363 SOT-363 marking th

    GSS4569

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/09/20 REVISED DATE : N-CH BVDSS 40V N-CH RDS ON 40m N-CH ID 5.0A P-CH BVDSS -40V N-CH RDS(ON) 100m N-CH ID -4.4A GSS4569 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4569 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GSS4569 GSS4569

    GT2530

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 72m N-CH ID 3.3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.3A GT2530 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		PDF GT2530 GT2530 OT-26

    GP4565

    Abstract: 40v N- and P-Channel dip
    Text: Pb Free Plating Product ISSUED DATE :2006/05/12 REVISED DATE : N-CH BVDSS 40V N-CH RDS ON 25m N-CH ID 7.6A P-CH BVDSS -40V N-CH RDS(ON) 33m N-CH ID -6.5A GP4565 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP4565 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GP4565 GP4565 40v N- and P-Channel dip

    GP4501

    Abstract: GP450
    Text: Pb Free Plating Product ISSUED DATE :2006/12/06 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 28m N-CH ID 7A P-CH BVDSS -30V N-CH RDS(ON) 50m N-CH ID -5.3A GP4501 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP4501 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GP4501 GP4501 GP450

    GT3585

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/02/16 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A GT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT3585 provide the designer with best combination of fast switching, low on-resistance and


    Original     		PDF GT3585 GT3585 OT-26

    GT2531

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : N-CH BVDSS 16V N-CH RDS ON 58m N-CH ID 3.5A P-CH BVDSS -16V N-CH RDS(ON) 125m N-CH ID -2.5A GT2531 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		PDF GT2531 GT2531 OT-26

    GTT3585

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/02/23 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A GTT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GTT3585 provide the designer with best combination of fast switching, low on-resistance and


    Original     		PDF GTT3585 GTT3585 00eserved.

    GSS9930

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/10/13 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 33m N-CH ID 6.3A P-CH BVDSS -30V N-CH RDS(ON) 55m N-CH ID -5.1A GSS9930 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS9930 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GSS9930 GSS9930

    GSS4500

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/04/21 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 30m N-CH ID 6A P-CH BVDSS -20V N-CH RDS(ON) 50m N-CH ID -5A GSS4500 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4500 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GSS4500 GSS4500

    GSS2030

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/04/24 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 30m N-CH ID 6A P-CH BVDSS -20V N-CH RDS(ON) 50m N-CH ID -5A GSS2030 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS2030 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GSS2030 GSS2030

    20C1D

    Abstract: GP2030S
    Text: Pb Free Plating Product ISSUED DATE :2005/08/10 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 60m N-CH ID 2.6A P-CH BVDSS -20V N-CH RDS(ON) 80m N-CH ID -2.3A GP2030S N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP2030S provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GP2030S GP2030S 20C1D

    GSS9510

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/11/18 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 28m N-CH ID 6.9A P-CH BVDSS -30V N-CH RDS(ON) 55m N-CH ID -5.3A GSS9510 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS9510 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GSS9510 GSS9510

    GSS4507

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B N-CH BVDSS 30V N-CH RDS ON 36m N-CH ID 6.0A P-CH BVDSS -30V N-CH RDS(ON) 72m N-CH ID -4.2A GSS4507 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4507 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4507 GSS4507

    GSS4509

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B N-CH BVDSS 30V N-CH RDS ON 14m N-CH ID 10A P-CH BVDSS -30V N-CH RDS(ON) 20m N-CH ID -8.4A GSS4509 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4509 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4509 GSS4509

    Taiwan Semiconductor 6A

    Abstract: GSS4503
    Text: Pb Free Plating Product ISSUED DATE :2005/07/29 REVISED DATE :2005/09/29B N-CH BVDSS 30V N-CH RDS ON 28m N-CH ID 6.9A P-CH BVDSS -30V N-CH RDS(ON) 36m N-CH ID -6.3A GSS4503 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4503 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4503 GSS4503 Taiwan Semiconductor 6A

    GSS4502

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/08/24 REVISED DATE :2005/09/29B N-CH BVDSS 20V N-CH RDS ON 18m N-CH ID 8.3A P-CH BVDSS -20V N-CH RDS(ON) 45m N-CH ID -5A GSS4502 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4502 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4502 GSS4502

    GSS4501

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/08/24 REVISED DATE :2006/11/09C N-CH BVDSS 30V N-CH RDS ON 28m N-CH ID 7A P-CH BVDSS -30V N-CH RDS(ON) 50m N-CH ID -5.3A GSS4501 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4501 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2006/11/09C GSS4501 GSS4501 40eserved.

    GSS4565

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/07/27 REVISED DATE :2005/09/29B N-CH BVDSS 40V N-CH RDS ON 25m N-CH ID 7.6A P-CH BVDSS -40V N-CH RDS(ON) 33m N-CH ID -6.5A GSS4565 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4565 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4565 GSS4565

    GSS4532

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/07/01 REVISED DATE :2005/09/29B N-CH BVDSS 30V N-CH RDS ON 50m N-CH ID 5A P-CH BVDSS -30V N-CH RDS(ON) 70m N-CH ID -4A GSS4532 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4532 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4532 GSS4532

    GSS4505

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B N-CH BVDSS 30V N-CH RDS ON 20m N-CH ID 8.3A P-CH BVDSS -30V N-CH RDS(ON) 28m N-CH ID -7.1A GSS4505 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4505 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4505 GSS4505

    GSS4575

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/06/06 REVISED DATE :2005/09/29B N-CH BVDSS 60V N-CH RDS ON 36m N-CH ID 6A P-CH BVDSS -60V N-CH RDS(ON) 72m N-CH ID -4.2A GSS4575 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4575 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF 2005/09/29B GSS4575 GSS4575

    300 Amp mosfet

    Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
    Text: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH


    OCR Scan     		PDF 400MHz T0106 200MHz 18Typ 250pA tiMaias11! 300 Amp mosfet mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp