O2W transistor
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KHB2D0N60P/F/F2
KHB2D0N60P
KHB2D0N60F
KHB2D0N60F2
KHB2D0N60F
O2W transistor
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V1F diode
Abstract: h2t1 tdi ccd ccd tdi binning ZENER DIODE t2 6k TDI-64 TDI CCD bi-directional diodes V3F CCD5061 CCD Linear Image Sensor
Text: PRELIMINARY DATA SHEET CCD5061 6K x 128 Element TDI – Time, Delay and Integration Sensor FEATURES • • • • • • • • 6144 pixels per line 128 lines of integration 8.75µm x 8.75µm pixel size # of TDI stages selectable from 128, 64, 32, 16, 8, 4
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CCD5061
20MHz
rate--80MHz
CCD5061
V1F diode
h2t1
tdi ccd
ccd tdi binning
ZENER DIODE t2 6k
TDI-64
TDI CCD bi-directional
diodes V3F
CCD Linear Image Sensor
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TDI-64
Abstract: CCD10121 Linear Image Sensor TDI CCD8091 TDI CCD bi-directional
Text: CCD5061 6K x 128 Element TDI — Time, Delay and Integration FEATURES • 6144 pixels per line • Number of TDI stages electronically selectable: 4, 8, 16, 32, 64, 96, 128 • Bi-directional TDI shift up or down • 4 outputs—each capable of 20MHz data rate—80 MHz total data rate per
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CCD5061
20MHz
rate--80
TDI-64
CCD10121
Linear Image Sensor TDI
CCD8091
TDI CCD bi-directional
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TSP160C
Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
Text: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04
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50Amp
80Amp
100Amp
375x360x390/390x240x420
375x360x390
O-252
TSP160C
ER1602CT
727 thyristor
uf1002ct
PANJIT ER306
1N4004 SOD-123
272 zk thyristor
mw 137 600g
pg2010
D804C
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shinano stepper motor
Abstract: microstepping L6203 L298N BTB16-600CW UNIVERSAL MOTOR SPEED CONTROL CIRCUIT zoo607ma fast diode transil 247 T1635H-6T L6393 PMSM stm32 L297D
Text: Motor control Selection guide January 2009 www.st.com Contents Microcontrollers 8-bit microcontroller families 32-bit microcontroller familes Development tools 4 4 7 15 Power Power MOSFETs IGBTs IGBT modules AC switches Triacs Diacs Ultrafast rectifiers Protection devices - Transil
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32-bit
PowerSO-10,
Max247
SGMOTOR1008
shinano stepper motor
microstepping L6203
L298N
BTB16-600CW UNIVERSAL MOTOR SPEED CONTROL CIRCUIT
zoo607ma
fast diode transil 247
T1635H-6T
L6393
PMSM stm32
L297D
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pt1017
Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253
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El00-KIT-ND
J200-KIT-ND
1600-KIT-ND
1601-KIT-ND
1602-KIT-ND
1603-KIT-ND
1604-KIT-ND
923000-I-ND
10514-ND
10522-ND
pt1017
mt 1389 vde
converter siemens modules GR 60 48V 120 A
SMD Code 12W SOT-23
600w 12V 230V Inverter schematic
mw 137 600g
PT1000 NTC TEMPERATURE CHART
smd 4pk
EPL1902S2C
67127490
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ST7FAUDIO
Abstract: st7faudioar9 VN1160 VNH5180 L4969URD VNH3SP30-E st VN1160 l5150 VB027SP6 ST7FAUDIO-AR9
Text: Car body solutions Selection guide May 2008 STMicroelectronics - May 2008 - Printed in Italy - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies. All other names are the property of their respective owners.
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SGCAR0508
ST7FAUDIO
st7faudioar9
VN1160
VNH5180
L4969URD
VNH3SP30-E
st VN1160
l5150
VB027SP6
ST7FAUDIO-AR9
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IXDI404PI
Abstract: IXDN404PI IXDI404SI-16 IXDN404 IXDF404PI cl470 IXDF404
Text: IXDN404PI / N404SI / N404SI-16 IXDF404PI / F404SI / F404SI-16 IXDI404PI / I404SI / I404SI-16 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire
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IXDN404PI
N404SI
N404SI-16
IXDF404PI
F404SI
F404SI-16
IXDI404PI
I404SI
I404SI-16
1800pF
IXDI404SI-16
IXDN404
cl470
IXDF404
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ksd 75
Abstract: TO-251-3L jfets discrete igbt
Text: Discrete Through-Hole Products Suffixes Pkg dim MOSFET Bipolar Diode JFETs IGBT Pkg method Qty pcs Reel dia Tape width (inch) (mm) Dim X Tape & Reel 4K 13 64 DO-35 Dim X Bulk 1K n/a n/a DO-41 Glass Dim Tape & Reel 3K 10.5 64 DO-41 Glass Dim Ammo Box 3K n/a
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DO-15
DO-35
DO-41
DO-201AD
DO-201AE
O-251-2L)
O-251-3L)
O-220
ksd 75
TO-251-3L
jfets
discrete igbt
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multilin
Abstract: h1 m6c recloser relay multilin C37.94 GE Power Management multilin 7H820 transistor 6c x Synchronism check relay multilin relay failure
Text: UR Feeder Management Relay 6 Feeder protection, control, monitoring and metering in one integrated package. Features and Benefits Protection and Control Q Optional high-impedance fault detection Q High impedance fault detection HI-Z Q IRIG-B time synchronization
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C37.94
Abstract: relay multilin multilin multilin relay failure multilin protect 4a medium voltage motor control center M60 motor relay overload protection of induction motor C3794 7H820
Text: UR Motor Manag ement Relay 7 Medium and large induction motor relay. Features and Benefits Q FlexLogic Q Virtual and distributed FlexLogic™ and expandable I/Os Q User-programmable Q User-definable Q Flash LEDs display messages memory for field upgrades
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IXDD408CI
Abstract: ixdd408pi Cd4011a
Text: PRELIMINARY DATA SHEET IXDD408PI IXDD408YI IXDD408CI Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak
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IXDD408PI
IXDD408YI
IXDD408CI
2500pF
IXDD408
IXDD480
Edisonstrasse15
IXDD408CI
Cd4011a
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2SJ0675
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0675 Silicon P-channel MOSFET For switching circuits Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 3 2 0.60±0.05 Low ON resistance Ron High-speed switching
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2002/95/EC)
2SJ0675
2SJ0675
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L99PM62
Abstract: VNH5019 SPC560D40 ST l99dz70 l99dz70 l99pm60 SPC560B50 L99PM62XP SPC560B STD18NF03L
Text: Advanced semiconductor solutions for door electronics Innovative, scalable system solutions for door electronics October 2008 www.st.com/automotive Door-actuator drivers STMicroelectronics’ actuator drivers are designed for state-of-the-art automotive door-module applications. Devices
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BRDOORZONE0908
L99PM62
VNH5019
SPC560D40
ST l99dz70
l99dz70
l99pm60
SPC560B50
L99PM62XP
SPC560B
STD18NF03L
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0675 Silicon P-channel MOSFET For switching circuits Unit: mm • Features 3 1 0.39+0.01 −0.03 1.00±0.05 Absolute Maximum Ratings Ta = 25°C Drain-source surrender voltage
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2002/95/EC)
2SJ0675
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Untitled
Abstract: No abstract text available
Text: IXDD408PI / 408SI / 408YI / 408CI 8 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak • Operates from 4.5V to 25V
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IXDD408PI
408SI
408YI
408CI
2500pF
IXDD408
IXDD480
Edisonstrasse15
D-68623;
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IXDD408PI
Abstract: IXDD408 Ultrafast MOSFET Driver 2N7000 IXDD480 VM0580-02F IC TTL 4700 cd4049a fully protected p channel mosfet 2N7000 TO220
Text: IXDD408PI / 408SI / 408YI / 408CI 8 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak • Operates from 4.5V to 25V
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IXDD408PI
408SI
408YI
408CI
2500pF
IXDD408
IXDD480
Edisonstrasse15
D-68623;
Ultrafast MOSFET Driver
2N7000
VM0580-02F
IC TTL 4700
cd4049a
fully protected p channel mosfet
2N7000 TO220
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404SI
Abstract: 404SI-16 IXDD404 IXDD404PI IXFN100N20 2N7000 IXFD100N20 404SIA
Text: PRELIMINARY DATA SHEET IXDD404PI / 404SI / 404SIA / 404SI-16 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak
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IXDD404PI
404SI
404SIA
404SI-16
1800pF
IXDD404
Edisonstrasse15
D-68623;
404SI-16
IXFN100N20
2N7000
IXFD100N20
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lm339 igbt driver
Abstract: low power mosfet Ultrafast MOSFET Driver smps LM339 LM339 APPLICATION 404si fully protected p channel mosfet 404SI-16 IXDD404PI IXDD404
Text: IXDD404PI / 404SI / 404SI-16 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 25V
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IXDD404PI
404SI
404SI-16
1800pF
IXDD404
Edisonstrasse15
D-68623;
lm339 igbt driver
low power mosfet
Ultrafast MOSFET Driver
smps LM339
LM339 APPLICATION
fully protected p channel mosfet
404SI-16
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APT601R3KN
Abstract: R6KN APT601R6KN
Text: ADVANCED P OWE R TECHNOLOGY blE D 0557^ 0^ 000071b =10i4 IAVP A dvanced P o w er Te c h n o l o g y APT601R3KN APT601R6KN 600V 6.5A 1.30Q 600V 5.8A 1.60Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.
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000071b
APT601R3KN
APT601R6KN
O-220AC
R6KN
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Untitled
Abstract: No abstract text available
Text: ADVANCED POtdER TECHNOLOGY b lE D • 000071b =104 ■ AVP ■R A d v a n c ed W /Æ P o w e r Te c h n o l o g y APT601R3KN APT601R6KN 600V 6.5A 1.30Q 600V 5.8A 1.60Ü POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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000071b
APT601R3KN
APT601R6KN
O-22QAC
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ns802
Abstract: 601r3kn
Text: A dvanced P ow er Te c h n o l o g y O D APT601R3KN APT601R6KN O S 600V 6.5A 1.30Q 600V 5.8A 1.60 £2 POWER MOS IV‘ N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS «Ü ' dm PD V stg All Ratings: TQ = 25°C unless otherwise specified.
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APT601R3KN
APT601R6KN
120VH
O-220AB
ns802
601r3kn
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IRF540
Abstract: irfp140
Text: S A MS UN G E L E C T R O N I C S INC b4E ]> • 7^4142 IRF540/541/542/543 IRFP140/141 /142/143 «sriGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • 00121b3 TO-220 Lower R ds o n Improved inductive ru gge d n e ss Fast sw itching tim es
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IRF540/541/542/543
IRFP140/141
00121b3
O-220
IRF540/IRFP1
IRFP141
IRFP140/141/142/143
IRF540
IRF540/541
IRF540
irfp140
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15A ZENER DIODE
Abstract: No abstract text available
Text: UC1707 UC2707 UC3707 y UNITRODE Dual Channel Power Driver FEATURES DESCRIPTION • Two independent Drivers The UC1707 family of power drivers is made with a high-speed Schottky process to interface between low-level control functions and high-power switching devices - particularly power MOSFETs. These devices contain
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1000pF
16-Pin
20-Pin
UC1707
UC2707
UC3707
15A ZENER DIODE
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