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    N 415 MOSFET Search Results

    N 415 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N 415 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ALD1101A

    Abstract: ALD1101 ALD1101B ALD1102 mosfet Vgs 10mV
    Text: ADVANCED LINEAR DEVICES, INC. ALD1101A/ALD1101B ALD1101 DUAL N-CHANNEL MATCHED MOSFET PAIR 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: 408 747-1155 Fax: (408) 747-1286 http://www.aldinc.com GENERAL DESCRIPTION


    Original     		PDF ALD1101A/ALD1101B ALD1101 ALD1101 10X10-6 10X10-9 10X10-12 ALD1101A ALD1101B ALD1102 mosfet Vgs 10mV

    CPC5621A

    Abstract: CPC5603C CPC5603CTR CPC5620A CPC5622A depletion mode fet
    Text: CPC5603 N Channel Depletion Mode FET Parameter Drain-to-Source Voltage VDS Max On-Resistance (Ron-max) Max Power Rating 415 14 2.5 Features • • • • • • • 415V Drain-to-Source Voltage Low On-Resistance: 8 Ohms (Typical) High Input Impedance


    Original     		PDF CPC5603 OT-223 CPC5603 DS-CPC5603-R03 CPC5621A CPC5603C CPC5603CTR CPC5620A CPC5622A depletion mode fet

    Untitled

    Abstract: No abstract text available
    Text: CPC5603 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)


    Original     		PDF CPC5603 OT-223 CPC5603 DS-CPC5603-R07

    b0742

    Abstract: *b0742 cpc5603
    Text: CPC5603 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)


    Original     		PDF CPC5603 CPC5603 DS-CPC5603-R06 b0742 *b0742

    MOS FET SOT-223

    Abstract: MOS FET SOT-223 ON depletion MOSFET CPC5603C CPC5603CTR CPC5620A CPC5621A CPC5622A depletion mode power mosfet
    Text: CPC5603 N Channel Depletion Mode FET Parameter Drain-to-Source Voltage VDS Max On-Resistance (Ron-max) Max Power Rating 415 14 2.5 Features • • • • • • • 415V Drain-to-Source Voltage Low On-Resistance: 8 Ohms (Typical) High Input Impedance


    Original     		PDF CPC5603 OT-223 CPC5603 DS-CPC5603-R02 MOS FET SOT-223 MOS FET SOT-223 ON depletion MOSFET CPC5603C CPC5603CTR CPC5620A CPC5621A CPC5622A depletion mode power mosfet

    CPC5603CTR

    Abstract: CPC5603C CPC5620A CPC5621A CPC5622A Depletion MOSFET 20V Depletion
    Text: CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C


    Original     		PDF CPC5603 OT-223 CPC5603 DS-CPC5603-R04 CPC5603CTR CPC5603C CPC5620A CPC5621A CPC5622A Depletion MOSFET 20V Depletion

    Untitled

    Abstract: No abstract text available
    Text: CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V Ω Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8Ω (Typical) @ 25°C


    Original     		PDF CPC5603 OT-223 DS-CPC5603-R04

    Untitled

    Abstract: No abstract text available
    Text: CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C


    Original     		PDF CPC5603 CPC5603 DS-CPC5603-R05

    FDG6332C_F085

    Abstract: ssot-6 12V DC-DC inverter application note FDG6332C SC70-6
    Text: FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs General Description Features • Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		PDF FDG6332C FDG6332C_F085 ssot-6 12V DC-DC inverter application note SC70-6

    Untitled

    Abstract: No abstract text available
    Text: FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs General Description Features • Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		PDF FDG6332C

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM17600GA-S •General Description ■Features ELM17600GA-S uses advanced trench technology to provide excellent Rds on a n d l o w g a t e c h a rg e . I n t e r n a l E S D protection is included. • • • • • N-channel P-channel


    Original     		PDF ELM17600GA-S ELM17600GA-S

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM17600GA-S •General Description ■Features ELM17600GA-S uses advanced trench technology to provide excellent Rds on a n d l o w g a t e c h a rg e . I n t e r n a l E S D protection is included. • • • • • N-channel P-channel


    Original     		PDF ELM17600GA-S ELM17600GA-S

    FDG6332C

    Abstract: SSOP6 SC70-6
    Text: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		PDF FDG6332C FDG6332C SSOP6 SC70-6

    FDC6332C

    Abstract: FDG6332C SC70-6
    Text: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		PDF FDG6332C FDC6332C FDG6332C SC70-6

    FDG6332C

    Abstract: SC70-6
    Text: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		PDF FDG6332C FDG6332C SC70-6

    Untitled

    Abstract: No abstract text available
    Text: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		PDF FDG6332C

    75N60C

    Abstract: No abstract text available
    Text: IXKN 75N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A 36 mΩ Ω D G S S miniBLOC, SOT-227 B MOSFET S Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C


    Original     		PDF 75N60C OT-227 75N60C

    复合

    Abstract: ELM17600GA
    Text: 复合沟道 MOSFET ELM17600GA-S •概要 ■特点 ELM17600GA-S 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=20V P 沟道 ·Vds=-20V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=0.9A Vgs=4.5V


    Original     		PDF ELM17600GA-S 复合 ELM17600GA

    Untitled

    Abstract: No abstract text available
    Text: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		PDF FDG6332C

    Marking Code m sc70-6

    Abstract: CBVK741B019 F63TNR FDG6302P FDG6306P SC70-6
    Text: FDG6306P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF FDG6306P SC70-6 SC70-6 Marking Code m sc70-6 CBVK741B019 F63TNR FDG6302P FDG6306P

    Untitled

    Abstract: No abstract text available
    Text: CALEX M A N U F A C T U R I N G CO SEE D • lailgSO CG0111S 4« «CEX 3 Watt Single Output DC/DC Converters _ 3355 Vincent Road, Pleasant Hill, CA 94523-4389 800-542-3355 Telephone 415 932-3911 FAX: (415)932-6017 FEATURES '" p 5 * 7 -I I • Low Profile Copper Case (0.375" High)


    OCR Scan     		PDF CG0111S 12S12 12S15

    INPUT 24VDC CHOPPER 12VDC OUTPUT

    Abstract: 24S12 24S15 TRANSFORMER LC 3120 0111 5 Calex T5771
    Text: CALEX M A N U F A C T U R I N G CO S2E 1> • 1811SS D 00 01 11 6 4M3 B C E X 3 Watt Single Output DC/DC Converters _ 3355 Vincent Road, Pleasant Hill, CA 94523-4389 800-542-3355 Telephone 415 932-3911 FEATURES FAX: (415)932-6017 C d c '" P ^ 7 ~


    OCR Scan     		PDF noisS15 48S15 INPUT 24VDC CHOPPER 12VDC OUTPUT 24S12 24S15 TRANSFORMER LC 3120 0111 5 Calex T5771

    CA 3080 E

    Abstract: 12D12.250 DDD1143 d 4464 c Calex calex model 160 12D15.200
    Text: CALEX M A N U FA CT UR IN G CO 52E D • 101125 0 0G 011 M2 7b2 ICEX 6 Watt Dual Output DC/DC Converters 3355 Vincent Road, Pleasant Hill, CA 94523-4389 800-542-3355 Telephone 415 932-3911 FAX: (415)932-6017 FEATURES " P S '? - \ I • Low Profile C opper Case (0.375" High)


    OCR Scan     		PDF 0G01142 12D12 12D15 T-57-11 CA 3080 E 12D12.250 DDD1143 d 4464 c Calex calex model 160 12D15.200

    smd M21

    Abstract: M21 SMD SMD H21 91543 7224u JANTX2N
    Text: International IOR Rectifier Government and Spa.ce Products •d Part Number Bvo$s V R0S{on) IQ Tr=25°C Pd T (A) I00°C @ T r = 25°C (W) (A) Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs S M D -] N-Channel IR F N 0 4 4 60


    OCR Scan     		PDF 1RFN350 7219U 7221U 7222U 7224U 7225U 7227U 7228U 904S7 904X7 smd M21 M21 SMD SMD H21 91543 JANTX2N