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Cree, Inc. C503B-ABN-CX0Y0342 Standard LEDs - Through Hole Amber Round LED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C503B-ABN-CX0Y0342		2,460			1 $0.2 10 $0.19 100 $0.17 1000 $0.154 10000 $0.154	Buy Now
Cree, Inc. C503B-ABN-CX0Y0341 Standard LEDs - Through Hole Amber Round LED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C503B-ABN-CX0Y0341		300			1 $0.2 10 $0.19 100 $0.17 1000 $0.154 10000 $0.154	Buy Now
Cree, Inc. C503B-ABN-CY0Z0341 Standard LEDs - Through Hole Amber Round
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C503B-ABN-CY0Z0341		7			1 $0.19 10 $0.18 100 $0.161 1000 $0.146 10000 $0.146	Buy Now
Cree, Inc. C503B-ABN-CW0X0341 Standard LEDs - Through Hole Amber Round LED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C503B-ABN-CW0X0341					1 $0.16 10 $0.148 100 $0.136 1000 $0.121 10000 $0.114	Get Quote
Cree, Inc. C503B-ABN-CW0X0342 Standard LEDs - Through Hole Amber Round LED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C503B-ABN-CW0X0342					1 $0.16 10 $0.148 100 $0.136 1000 $0.122 10000 $0.114	Get Quote

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N 341 AB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
tact micro switch smd Abstract: smd transistor 337 IBM 7914 circuit diagram 7643J 7906S-1 SMD MARKING CODE sdp micro tact switch TACT 10mm Square SWITCH SMD MARKING CODE SDT S7814 Text: w w w . b o u r n s . c o m Switches I. Product Selection Guide .340 II. Product Specifications are subject to change without notice.	Original		PDF
TIM3742-16SL-341 Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM3742-16SL-341 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level n HIGH POWER P1dB=42.5dBm at 3.3GHz to 3.6GHz n HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz	Original	TIM3742-16SL-341 45GHz TIM3742-16SL-341	PDF
TIM3742-45SL-341 Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM3742-45SL-341 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.5dBm Single Carrier Level n HIGH POWER P1dB=46.5dBm at 3.3GHz to 3.6GHz n HIGH GAIN G1dB=11dB at 3.3GHz to 3.6GHz	Original	TIM3742-45SL-341 TIM3742-45SL-341	PDF
TIM3472-4SL-341 Abstract: TIM3742-4SL-341 Text: MICROWAVE POWER GaAs FET TIM3742-4SL-341 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level n HIGH POWER P1dB=36.5dBm at 3.3GHz to 3.6GHz n HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz	Original	TIM3742-4SL-341 TIM3472-4SL-341 TIM3472-4SL-341 TIM3742-4SL-341	PDF
TIM3742-8SL-341 Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM3742-8SL-341 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level n HIGH POWER P1dB=39.5dBm at 3.3GHz to 3.6GHz n HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz	Original	TIM3742-8SL-341 45GHz TIM3742-8SL-341	PDF
TIM3742-30SL-341 Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM3742-30SL-341 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 3.3GHz to 3.6GHz n HIGH GAIN G1dB=11.0dB at 3.3GHz to 3.6GHz	Original	TIM3742-30SL-341 TIM3742-30SL-341	PDF
TIM3742-4SL-341 Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM3742-4SL-341 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=36.5dBm at 3.3GHz to 3.6GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C	Original	TIM3742-4SL-341 2-11D1B) TIM3742-4SL-341	PDF
ozdv 2471 Abstract: HIRSCHMANN 6 pin connector IEC 947-5-2 6700M Text: OZDV 2471 P Bestell-Nr. / Ord. code / N° de cde. Beschreibung und Betriebsanleitung Optischer Schnittstellenwandler Description and Operating Instructions Optical interface converter 943 340-021 OZDV 2471 G Bestell-Nr. / Ord. code / N° de cde. 943 341-021	Original	D-72654 ozdv 2471 HIRSCHMANN 6 pin connector IEC 947-5-2 6700M	PDF
Untitled Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR SHD208505 TECHNICAL DATA DATA SHEET 341, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 500 VOLT, 0.415 OHM MOSFET IN A HERMETIC TO-254Z PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE	Original	SHD208505 O-254Z 250mA 10Vdc, 20Vdc,	PDF
74x138 Abstract: 8086 bios function call ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM schematic diagram of laptop motherboard laptop motherboard resistors laptop intel MOTHERBOARD CIRCUIT diagram Phoenix BIOS 32 Pin PLCC 6268 sram laptop bios 8 pin laptop motherboard ic details with image Text: inteJ ^ APPLICATION NOTE AP-341 October 1990 Designing an Updatable BIOS Using Flash Memory DON VERNER APPLICATION ENGINEER Order Number: 292077-001 Intel Corporation, 1990 6-248 AP-341 CONTENTS page 1.0 IN T R O D U C T IO N . 6-251	OCR Scan	AP-341 74x138 8086 bios function call ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM schematic diagram of laptop motherboard laptop motherboard resistors laptop intel MOTHERBOARD CIRCUIT diagram Phoenix BIOS 32 Pin PLCC 6268 sram laptop bios 8 pin laptop motherboard ic details with image	PDF
1n914 equivalent Abstract: Y341 IT 341 N 341 AB 1N4148 1N914 TSC341 circuit for logic gates diode 331 321 CJ Text: 580 Pleasant Street Watertown, M A 02172 617 924-9280 TSC341 Multi-Function Gates L /7 3 5 • Dual 2-Wide, 2-input AND-OR-tnvert • Dual Expandable Â N D -N O R Features G e n e ra l Descriptions 341 341 • PR O VID ES COM PLEX FUNCTION WITH LOW SUPPLY D R A IN	OCR Scan	TSC341 WatertowfnMAtro2i72 1N4148 20-volt 1N914 1n914 equivalent Y341 IT 341 N 341 AB TSC341 circuit for logic gates diode 331 321 CJ	PDF
B 342 Dc Abstract: No abstract text available Text: M an A M P com pany Matched GaAs SPST Switch DC-2000 MHz SW-341, SW-342 SW-341 CR-2 w/o Pin 1 Features 0.260 ' (6.60)- • L o w In s e r tio n Loss • U lira L o w D C P o w e r C o n su m p tio n • R isi S w itc h in g S p e e d 0.085 TYP (2.16) Ï	OCR Scan	DC-2000 SW-341, SW-342 SW-341 SW-341 SW-342 B 342 Dc	PDF
D0233 Abstract: 250JUA 250M IRFS340 IRFS341 Tj-25DC Text: N-CHANNEL POWER MOSFETS IRFS340/341 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	IRFS340/341 IRFS340 IRFS341 71b4142 2ti35ti D0233 250JUA 250M Tj-25DC	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRFP340/341 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	IRFP340/341 IRFP340 IRFP341	PDF

IRF740 Abstract: diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341 Text: IRF740/741/742/743 IRFP340/341/342/343 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area	OCR Scan	IRF740/741/742/743 IRFP340/341/342/343 40/IRFP34Û IRF741-IRFP341 IRF742/IRFP342 IRF743/IRFP343 IRF740 diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors ^53*131 0031743 341 • APX PNP 1 GHz video transistors ^ Product specification BFQ255; BFQ255A N AMER PHILIPS/DISCRETE FEATURES b'lE ]> PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product	OCR Scan	BFQ255; BFQ255A O-202) BFQ235 BFQ235A 0Q317MA UBB688 bb53T31	PDF
12y sot 23 Abstract: BZV49 Series bzv 46 BZV49 BZV49-C24 33y sot 23 51Y diode mm1680 V40C3 C6V2 diode Text: • b b S B ^ l 0025723 341 HAPX N AMER PHILIPS/DISCRETE b?E D B Z V 4 9 SERIES _ / V SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, in a SOT-89 plastic envelope, intended fo r stabilization applica	OCR Scan	bb53131 02S723 BZV49 OT-89 OT-89 7Z77973 12y sot 23 BZV49 Series bzv 46 BZV49-C24 33y sot 23 51Y diode mm1680 V40C3 C6V2 diode	PDF
Untitled Abstract: No abstract text available Text: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance	OCR Scan	IRF740/741/742/743 IRFP340/341/342/343 F740/IRFP340 IRF741 /IRFP341 F742/IRFP342 F743/IRFP343 IRF740 IRFP340 IRF741	PDF
Transistor 5331 Abstract: BSV16 BSV17 BSV17-10 bsv16-16 BSV16-10 BSV15 BSV15-10 Silicon Epitaxial Planar Transistor philips Text: I I N AMER PHIL I P S / D I S C R E T E t.'ÎE J> 002707b 341 I IAPX BSV15 to 17 ^ 5 3 ^ 3 1 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.	OCR Scan	BSV15 BSV15â BSV16â BSV17â BSV15; BSV16; Transistor 5331 BSV16 BSV17 BSV17-10 bsv16-16 BSV16-10 BSV15-10 Silicon Epitaxial Planar Transistor philips	PDF
TIM3742-16SL-341 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-16SL-341 TECHNICAL DATA FEATURES : • LOW IN TER M O D U LA TIO N D ISTO R TIO N HIGH GAIN G1dB = 11 dB at 3.3 G H z to 3.6 G Hz ; IM 3 = - 4 5 dBc at Po = 31.5 dBm, BROAD BAND INTERNALLY MATCHED	OCR Scan	TIM3742-16SL-341 -TIM3742-16SL-341- 45GHz TIM3742-16SL-341	PDF
C6V8 PH Abstract: C5V6 ph PH C5V1 C4V7 PH C5V1 ph C6V2 PH PH C3V6 PH c9v1 C7V5 PH 1R SOT89 Text: • bbS3S31 00SS723 341 H A P X N AMER PHILIPS/DISCRETE b7E » BZV49 SERIES J V SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, in a SOT-89 plastic envelope, intended fo r stabilization applica tions in thick and th in -film circuits.	OCR Scan	bbS3S31 00SS723 BZV49 OT-89 OT-89 QQ2573Q bbS3T31 7Z77973 C6V8 PH C5V6 ph PH C5V1 C4V7 PH C5V1 ph C6V2 PH PH C3V6 PH c9v1 C7V5 PH 1R SOT89	PDF
EUPEC TT 25 N 12 Abstract: No abstract text available Text: EUPEC blE J> m 34032^7 G00115b 341 H U P E C TT 42 F, T D 42 F, DT42 F Elektrische Eigenschaften Electrical properties Höchstzulässige W erte M axim um rated values Periodische Vorwärts- und R ückw ärts-Spitzensperrspan n ung repetitive peak forw ard off-state	OCR Scan	G00115b EUPEC TT 25 N 12	PDF
91022C Abstract: No abstract text available Text: 75 A 1 .6 /5 .6 - NF RANGE CRIMP TYPE JACKS S TR A IG H T BULK HEAD JACKS, PANEL IN S U LA TE D screw-on or slide-on . 1 1 8 ( 3 ) n o n in s u la te d C ABLE P ART NO. Dia. a Dim . B Assembly code •1 0 2 D (0 2 .6 ) 75 P. L 910/22 m ini wrapping R 129 341	OCR Scan		PDF
FPT120 Abstract: FPT120A FPT120B FPT120C FPT130 FPT130A OPTO-26 OPTO-28 Text: FAIRCHILD Û4 S EM I C ONDU C T OR DE ^341^1374 0D57BLD FPT120/A/B/C FPT130/A/B FAIRCHILD A Schlum berger Com pany High Sensitivity Silicon Phototransistors General Description The FPT120/A/B/C and FPT130/A/B are silicon nitride protected N PN Planar phototransistors with exceptionally	OCR Scan	FPT120/A/B/C FPT130/A/B FPT120 OPTO-26 FPT120A FPT120B FPT120C FPT130 FPT130A OPTO-26 OPTO-28	PDF

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N 341 AB Search Results

N 341 AB Price and Stock

Cree, Inc. C503B-ABN-CX0Y0342

Cree, Inc. C503B-ABN-CX0Y0341

Cree, Inc. C503B-ABN-CY0Z0341

Cree, Inc. C503B-ABN-CW0X0341

Cree, Inc. C503B-ABN-CW0X0342

N 341 AB Datasheets Context Search

tact micro switch smd

TIM3742-16SL-341

TIM3742-45SL-341

TIM3472-4SL-341

TIM3742-8SL-341

TIM3742-30SL-341

TIM3742-4SL-341

ozdv 2471

Untitled

74x138

1n914 equivalent

B 342 Dc

D0233

Untitled

IRF740

Untitled

12y sot 23

Untitled

Transistor 5331

TIM3742-16SL-341

C6V8 PH

EUPEC TT 25 N 12

91022C

FPT120