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    N -CHANNEL POWER SOT 6 Search Results

    N -CHANNEL POWER SOT 6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    N -CHANNEL POWER SOT 6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .


    Original     		PDF OT-363 CJ7252KDW OT-363 2N7002K CJ502K

    CJ1012

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET SOT-523 General Description This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS ON . 1. GATE


    Original     		PDF OT-523 CJ1012 OT-523 600mA 250uA

    V/AA3R

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.


    Original     		PDF OT-223 O-252 6N10L-TN3-T 6N10G-TN3-T 6N10L-TN3-R 6N10G-TN3-R 6N10L-AA3-R 6N10G-AA3-R QW-R502-486 V/AA3R

    6N10G-AA3-R

    Abstract: 6n10g
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Preliminary Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.


    Original     		PDF OT-223 O-252 O-252 OT-223 6N10L-TN3-R 6N10G-TN3-R QW-R502-486 6N10G-AA3-R 6n10g

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.


    Original     		PDF OT-223 O-252 6N10L-TN3-T 6N10G-TN3-T 6N10L-TN3-R 6N10G-TN3-R 6N10L-AA3-R 6N10G-AA3-R QW-R502-486.

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    N1N20

    Abstract: 6772 sot 223 STN1N20
    Text: STN1N20 N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY Power MOSFET Features • Type VDSS RDS on max ID STN1N20 200 V < 1.5 Ω 1A 4 100% avalanche tested 1 Application ■ 2 3 SOT-223 Switching applications Description This device is an N-channel Power MOSFET


    Original     		PDF STN1N20 OT-223 OT-223 N1N20 6772 sot 223 STN1N20

    Untitled

    Abstract: No abstract text available
    Text: February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF NDT451AN NDT451AN

    NDT453N

    Abstract: 201A3 CBVK741B019 F63TNR F852 PN2222A
    Text: September 1996 NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF NDT453N NDT453N 201A3 CBVK741B019 F63TNR F852 PN2222A

    NDT014

    Abstract: No abstract text available
    Text: September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDT014 NDT014

    Untitled

    Abstract: No abstract text available
    Text: September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDT014

    GM3055

    Abstract: GM-305 8A SOT89
    Text: GM3055 1/6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The SOT-89 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Package Dimensions SOT-89


    Original     		PDF GM3055 OT-89 OT-89 GM3055 GM-305 8A SOT89

    UT6402G-AG6-R

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT6402 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 3 DESCRIPTION SOT-23 The UT6402 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical


    Original     		PDF UT6402 OT-23 UT6402 OT-26 UT6402L-AE3-R UT6402G-AE3-R UT6402L-AG6-R UT6402G-AG6-R UT6402G-AG6-R

    NDT451N

    Abstract: No abstract text available
    Text: September 1996 NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Features 5.5A, 30V. RDS ON = 0.05Ω @ VGS = 10V. Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF NDT451N NDT451N

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1  DESCRIPTION SOT-223 The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge


    Original     		PDF UF3N25Z OT-223 UF3N25Z O-252 O-251 UF3N25ZL-AA3-R UF3N25ZG-AA3-R UF3N25ZL-TM3-T UF3N25ZG-TM3-T

    um6k31n

    Abstract: UM6K31
    Text: UNISONIC TECHNOLOGIES CO., LTD UM6K31N Preliminary Power MOSFET SILICON N-CHANNEL MOSFET TRANSISTOR „ 6 DESCRIPTION 5 4 The UTC UM6K31N is a silicon N-channel MOS Field Effect Transistor. It can be used in switching applications. „ „ 3 SOT-363 SYMBOL ORDERING INFORMATION


    Original     		PDF UM6K31N OT-363 UM6K31N UM6K31NL-AL6-R UM6K31NG-AL6-R OT-363 QW-R502-503 UM6K31

    NDT410EL

    Abstract: JCR SOT
    Text: August 1996 NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 2.1A 100V. RDS ON = 0.25Ω @ VGS = 5V. Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS


    Original     		PDF NDT410EL NDT410EL JCR SOT

    SST204

    Abstract: No abstract text available
    Text: SST204 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST204 The SST204 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well


    Original     		PDF SST204 OT-23 SST204

    Untitled

    Abstract: No abstract text available
    Text: SST202 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST202 The SST202 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well


    Original     		PDF SST202 OT-23 SST202

    SST201

    Abstract: No abstract text available
    Text: SST201 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST201 The SST201 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well


    Original     		PDF SST201 OT-23 SST201

    Untitled

    Abstract: No abstract text available
    Text: LSJ204 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix LSJ204 The LSJ204 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well


    Original     		PDF LSJ204 OT-23 LSJ204

    J201 Replacement

    Abstract: LSJ201
    Text: LSJ201 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J201 The LSJ201 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well


    Original     		PDF LSJ201 OT-23 J201 Replacement

    TSM1NB60CW

    Abstract: N-Channel mosfet 600v 1a TSM1NB60 TSM1NB60CWRPG TSM1NB60CP
    Text: TSM1NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 10 @ VGS =10V 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced


    Original     		PDF TSM1NB60 O-251 O-252 OT-223 TSM1NB60 TSM1NB60CH TSM1NB60CP O-251 75pcs TSM1NB60CW N-Channel mosfet 600v 1a TSM1NB60CWRPG

    XP151A03A7MR

    Abstract: No abstract text available
    Text: XP151A03A7MR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.17Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP151A03A7MR is a N-Channel Power MOS FET with low on-state


    Original     		PDF XP151A03A7MR OT-23 XP151A03A7MR OT-23