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    N -CHANNEL POWER SOT 23 Search Results

    N -CHANNEL POWER SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    N -CHANNEL POWER SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XP162A12A6PR

    Abstract: XP161A04 XP151A01C3MR xp151a03 XP161A06 XP151A03A7MR
    Text: N & P CHANNEL MOSFETS XP15x & XP16x SERIES • LOW ON RESISTANCE, HIGH SPEED SWITCHING AND LOW POWER CONSUMPTION • OPERATING VOLTAGES FROM 1.5V TO 4.5V • SOT-23 AND SOT-89 PACKAGE SIZES AVAILABLE N & P CHANNEL MOSFETS TA = 25˚C • • • • • •


    Original     		PDF XP15x XP16x OT-23 OT-89 XP151A03A7MR XP151A13A0MR XP161A06A7PR XP161A0390PR XP161A1355PR XP151A02B0MR XP162A12A6PR XP161A04 XP151A01C3MR xp151a03 XP161A06

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    UT6402G-AG6-R

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT6402 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 3 DESCRIPTION SOT-23 The UT6402 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical


    Original     		PDF UT6402 OT-23 UT6402 OT-26 UT6402L-AE3-R UT6402G-AE3-R UT6402L-AG6-R UT6402G-AG6-R UT6402G-AG6-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT6402 Power MOSFET N-CHANNEL ENHANCEMENT MODE  3 DESCRIPTION SOT-23 The UT6402 is N-Channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation


    Original     		PDF UT6402 OT-23 UT6402 OT-26 UT6402G-AE3-R UT6402G-AG6-R QW-R502-152

    Power MOSFET N-Channel sot-23

    Abstract: SOT-23 1g SOT23 1G
    Text: CHENMKO ENTERPRISE CO.,LTD CHM1592PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE * N-Channel Enhancement


    Original     		PDF CHM1592PT OT-23 Power MOSFET N-Channel sot-23 SOT-23 1g SOT23 1G

    Untitled

    Abstract: No abstract text available
    Text: LSJ202 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J202 The LSJ202 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well


    Original     		PDF LSJ202 OT-23

    SST204

    Abstract: No abstract text available
    Text: SST204 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST204 The SST204 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well


    Original     		PDF SST204 OT-23 SST204

    Untitled

    Abstract: No abstract text available
    Text: SST202 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST202 The SST202 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well


    Original     		PDF SST202 OT-23 SST202

    SST201

    Abstract: No abstract text available
    Text: SST201 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST201 The SST201 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well


    Original     		PDF SST201 OT-23 SST201

    Untitled

    Abstract: No abstract text available
    Text: LSJ204 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix LSJ204 The LSJ204 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well


    Original     		PDF LSJ204 OT-23 LSJ204

    J201 Replacement

    Abstract: LSJ201
    Text: LSJ201 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J201 The LSJ201 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well


    Original     		PDF LSJ201 OT-23 J201 Replacement

    XP151A03A7MR

    Abstract: No abstract text available
    Text: XP151A03A7MR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.17Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP151A03A7MR is a N-Channel Power MOS FET with low on-state


    Original     		PDF XP151A03A7MR OT-23 XP151A03A7MR OT-23

    XP151A01C3MR

    Abstract: No abstract text available
    Text: XP151A01C3MR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.33Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP151A01C3MR is a N-Channel Power MOS FET with low on-state


    Original     		PDF XP151A01C3MR OT-23 XP151A01C3MR OT-23

    XP151A02B0MR

    Abstract: No abstract text available
    Text: XP151A02B0MR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.2Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP151A02B0MR is a N-Channel Power MOS FET with low on-state


    Original     		PDF XP151A02B0MR OT-23 XP151A02B0MR OT-23

    Untitled

    Abstract: No abstract text available
    Text: Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS V Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench


    Original     		PDF WNM2024 OT-23 WNM2024

    w34 transistor

    Abstract: W34 SOT-89
    Text: Product specification WNM2034 N-Channel, 20V, 3.6A, Power MOSFET VDS V 20 Rdson (ȍ) 0.037 @ 10V 0.045 @ 4.5V Descriptions SOT-23 The WNM2034 is N-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS


    Original     		PDF WNM2034 OT-23 WNM2034 w34 transistor W34 SOT-89

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ9926 N-Channel Enhancement-Mode MOSFET SOT-23 FEATURE z Advanced trench process technology z High Density Cell Design for Ultra Low On-Resistance z High Power and Current handing capability


    Original     		PDF OT-23 CJ9926 OT-23 150otherwise

    WNM2025

    Abstract: No abstract text available
    Text: Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS V Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench


    Original     		PDF WNM2025 OT-23-3L WNM2025

    transistor w04

    Abstract: marking W04 w04 transistor sot 23 marking CODE W04 sot-23 w04 sot transistor SOT-23 w04 w04 sot-23 sot 23 w04 transistor marking w04 transistor sot w04
    Text: Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS V Rds(on) (Ω) 0.038@ VGS=4.5V 0.044@ VGS=2.5V 20 0.052@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench


    Original     		PDF WNM2023 OT-23-3L WNM2023 transistor w04 marking W04 w04 transistor sot 23 marking CODE W04 sot-23 w04 sot transistor SOT-23 w04 w04 sot-23 sot 23 w04 transistor marking w04 transistor sot w04

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2306 N-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S6


    Original     		PDF OT-23 CJ2306 OT-23 to150

    CJ2302

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302 N-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2


    Original     		PDF OT-23 CJ2302 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2304 N-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S4


    Original     		PDF OT-23 CJ2304 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2304 N-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S4


    Original     		PDF OT-23 CJ2304 OT-23

    CJ2302

    Abstract: MOSFET SOT-23 cj230 mosfet vgs 5v marking diode S2 sot-23 CJ2302 S2
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2302 N-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2


    Original     		PDF OT-23 CJ2302 OT-23 Width300 MOSFET SOT-23 cj230 mosfet vgs 5v marking diode S2 sot-23 CJ2302 S2