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    Macronix International Co Ltd MX29F1610MC-12

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    Quest Components MX29F1610MC-12 11
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    MX29F161 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MX29F1610 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A-10 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A-12 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A-90 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A/B Macronix International 16M-BIT [2M x8/1M x16] CMOS Original PDF
    MX29F1610B-10 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610B-12 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610B-90 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1611 Macronix International 16M-BIT [2M x 8/1M x 16] CMOS Original PDF
    MX29F1611 Macronix International 16m-bit [2m x 8/1m x 16] Cmos Single Voltage Pagemode Flash Eeprom Original PDF
    MX29F1615 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF

    MX29F161 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    29f1615

    Abstract: MX29f1615
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		PDF MX29F1615 16M-BIT 90/100/120ns PM0615 JUN/15/2001 29f1615 MX29f1615

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000

    MX29F1610A

    Abstract: MX29F1610B PM05
    Text: Introduction Selection Guide PRELIMINARY MX29F1610A/B 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:100,000 cycles • Fast access time: 70/90/120ns • Sector erase architecture


    Original     		PDF MX29F1610A/B 16M-BIT 70/90/120ns MX29F1610A MX29F1610B PM05

    MX29F1611

    Abstract: No abstract text available
    Text: Introduction Selection Guide PRELIMINARY MX29F1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns


    Original     		PDF MX29F1611 16M-BIT 100/120/150ns 50/60/70ns 150ms MX29F1611

    MX29F1610

    Abstract: 29F1610-12 00F1H
    Text: Introduction Selection Guide MX29F1610 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:10,000 cycles • Fast access time: 120/150ns • Sector erase architecture


    Original     		PDF MX29F1610 16M-BIT 120/150ns 150ms MX29F1610 29F1610-12 00F1H

    Untitled

    Abstract: No abstract text available
    Text: MX29F1610TC-12C3 1/2 IL08 16 M (2,097,152 x 8/1,048,576 x 16)-BIT FLASH EPROM —TOP VIEW— 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 INPUTS A0 - A19 BYTE CE1, CE2


    Original     		PDF MX29F1610TC-12C3 Q15/A-1 MX29F1610

    MX-1610

    Abstract: No abstract text available
    Text: APPLICATION NOTE MX29F1610 16Mb FLASH MEMORY Since the erase/program time for flash memory are depended on the operation temperature, number of cycle, Vcc, and other factors. This application note is trying to optimize the erase/program performance by using the polling technology to check the


    Original     		PDF MX29F1610 F16MSetupAddr1] F16MSetupCmd1; F16MSetupAddr2] F16MSetupCmd2; F16MSetupAddr3] MX1610 MX-1610

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		PDF MX29F1615 16M-BIT 90/100/120ns P14-17 MAY/05/1999 OCT/01/1999 NOV/03/1999

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64


    Original     		PDF MX29F1611 16M-BIT bytes/64 100uA 100/120/150ns PM0440

    MX29F1610B

    Abstract: MX29F1610A
    Text: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1610A/B 16M-BIT 90/100/120ns May/13/1998 Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 MX29F1610B MX29F1610A

    MX29F1610B

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 JUN/15/2001 NOV/21/2002 MX29F1610B

    MX29F1610B

    Abstract: MX29F1610A
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 JUN/15/2001 MX29F1610B MX29F1610A

    29f1615

    Abstract: MX29f1615 29f1615-10
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		PDF MX29F1615 16M-BIT 90/100/120ns JUN/15/2001 NOV/21/2002 29f1615 MX29f1615 29f1615-10

    29F1615

    Abstract: mx29f1615
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		PDF MX29F1615 16M-BIT 90/100/120ns compatibl23 42-PIN PM0615 29F1615 mx29f1615

    29f1615

    Abstract: No abstract text available
    Text: MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1615 16M-BIT 90/100/120ns JUN/15/2001 NOV/21/2002 JAN/27/2004 PM0615 29f1615

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/120ns


    Original     		PDF MX29F1610A/B 16M-BIT 90/120ns

    Untitled

    Abstract: No abstract text available
    Text: MX29F1610 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:10,000 cycles Fast access time: 100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each


    Original     		PDF MX29F1610 16M-BIT 100/120ns 150ms PM0260

    MX29F1610

    Abstract: MX29F1610B MX29F1610A A14A
    Text: INDEX PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 70/90/120ns


    Original     		PDF MX29F1610A/B 16M-BIT 70/90/120ns MX29F1610 MX29F1610B MX29F1610A A14A

    MX29F1611

    Abstract: No abstract text available
    Text: INDEX PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64


    Original     		PDF MX29F1611 16M-BIT bytes/64 100uA 100/120/150ns PM0440 MX29F1611

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


    Original     		PDF ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2

    Untitled

    Abstract: No abstract text available
    Text: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture


    OCR Scan     		PDF MX29F1610 120/150ns 150ms Int03/11/1998 44-PIN 48-PIN

    Untitled

    Abstract: No abstract text available
    Text: r a iU M — IWXIC FEATURES ì m y MX29F1611 1 6 M-BIT[2 M X 8 / 1 M X 1 6 ] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM • • • • • • 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns


    OCR Scan     		PDF MX29F1611 100/120/150ns 50/60/70ns 150ms det98 PM0440 44-PIN

    00F1H

    Abstract: No abstract text available
    Text: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles


    OCR Scan     		PDF MX29F1 100/120/150ns -100mA 100mA 100ns 00F1H

    MX93011

    Abstract: No abstract text available
    Text: MX9691L SINGLE CHIP SOLID STATE DISK CONTROLLER 1. FEATURE Host Interface Buffer RAM Manager • PCMCIA 2.1 and PC Card ATA standard compatible. - Memory mapped or I/O operation. • Compatible with all PC Card Services and Socket Service. • Fast ATA host-to-buffer burst transfer rates up to


    OCR Scan     		PDF MX9691L 20MB/sec. MX93011