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    Macronix International Co Ltd MX29F1610MC-12

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    MX29F16 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MX29F1610 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A-10 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A-12 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A-90 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A/B Macronix International 16M-BIT [2M x8/1M x16] CMOS Original PDF
    MX29F1610B-10 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610B-12 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610B-90 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1611 Macronix International 16M-BIT [2M x 8/1M x 16] CMOS Original PDF
    MX29F1611 Macronix International 16m-bit [2m x 8/1m x 16] Cmos Single Voltage Pagemode Flash Eeprom Original PDF
    MX29F1615 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF

    MX29F16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    29f1615

    Abstract: MX29f1615
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		PDF MX29F1615 16M-BIT 90/100/120ns PM0615 JUN/15/2001 29f1615 MX29f1615

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000

    MX29F1610A

    Abstract: MX29F1610B PM05
    Text: Introduction Selection Guide PRELIMINARY MX29F1610A/B 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:100,000 cycles • Fast access time: 70/90/120ns • Sector erase architecture


    Original     		PDF MX29F1610A/B 16M-BIT 70/90/120ns MX29F1610A MX29F1610B PM05

    MX29F1611

    Abstract: No abstract text available
    Text: Introduction Selection Guide PRELIMINARY MX29F1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns


    Original     		PDF MX29F1611 16M-BIT 100/120/150ns 50/60/70ns 150ms MX29F1611

    MX29F1610

    Abstract: 29F1610-12 00F1H
    Text: Introduction Selection Guide MX29F1610 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:10,000 cycles • Fast access time: 120/150ns • Sector erase architecture


    Original     		PDF MX29F1610 16M-BIT 120/150ns 150ms MX29F1610 29F1610-12 00F1H

    Untitled

    Abstract: No abstract text available
    Text: MX29F1610TC-12C3 1/2 IL08 16 M (2,097,152 x 8/1,048,576 x 16)-BIT FLASH EPROM —TOP VIEW— 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 INPUTS A0 - A19 BYTE CE1, CE2


    Original     		PDF MX29F1610TC-12C3 Q15/A-1 MX29F1610

    MX-1610

    Abstract: No abstract text available
    Text: APPLICATION NOTE MX29F1610 16Mb FLASH MEMORY Since the erase/program time for flash memory are depended on the operation temperature, number of cycle, Vcc, and other factors. This application note is trying to optimize the erase/program performance by using the polling technology to check the


    Original     		PDF MX29F1610 F16MSetupAddr1] F16MSetupCmd1; F16MSetupAddr2] F16MSetupCmd2; F16MSetupAddr3] MX1610 MX-1610

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		PDF MX29F1615 16M-BIT 90/100/120ns P14-17 MAY/05/1999 OCT/01/1999 NOV/03/1999

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64


    Original     		PDF MX29F1611 16M-BIT bytes/64 100uA 100/120/150ns PM0440

    MX29F1610B

    Abstract: MX29F1610A
    Text: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1610A/B 16M-BIT 90/100/120ns May/13/1998 Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 MX29F1610B MX29F1610A

    MX29F1610B

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 JUN/15/2001 NOV/21/2002 MX29F1610B

    MX29F1610B

    Abstract: MX29F1610A
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 JUN/15/2001 MX29F1610B MX29F1610A

    29f1615

    Abstract: MX29f1615 29f1615-10
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		PDF MX29F1615 16M-BIT 90/100/120ns JUN/15/2001 NOV/21/2002 29f1615 MX29f1615 29f1615-10

    29F1615

    Abstract: mx29f1615
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		PDF MX29F1615 16M-BIT 90/100/120ns compatibl23 42-PIN PM0615 29F1615 mx29f1615

    27080

    Abstract: crystal 4MHz crystal 32768hz ADD12 ST2108 ADD-10 Low Voltage Detector ST2100 ADD10 65C02
    Text: Sitronix ST2100/08 Development Tool User Guide 1. ST21xx E.V. Board Figure 65C02 CPU J7 MX29F16 J4 9V DC IN - Program ROM + U11 U5 Sitronix U6 Crystal 32768Hz SYS[0] SYS[1] SYS[2] SYS[3] SYS[4] SYS[5] SYS[6] SYS[7] STOPB SBYBO BIOS U8 U12 OFF / ON Y1 J12 Crystal


    Original     		PDF ST2100/08 ST21xx 65C02 MX29F16 32768Hz ST2100/2108) Prog080 2000-May-15 27080 crystal 4MHz crystal 32768hz ADD12 ST2108 ADD-10 Low Voltage Detector ST2100 ADD10 65C02

    29f1615

    Abstract: No abstract text available
    Text: MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1615 16M-BIT 90/100/120ns JUN/15/2001 NOV/21/2002 JAN/27/2004 PM0615 29f1615

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/120ns


    Original     		PDF MX29F1610A/B 16M-BIT 90/120ns

    Untitled

    Abstract: No abstract text available
    Text: MX29F1610 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:10,000 cycles Fast access time: 100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each


    Original     		PDF MX29F1610 16M-BIT 100/120ns 150ms PM0260

    MX29F1610

    Abstract: MX29F1610B MX29F1610A A14A
    Text: INDEX PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 70/90/120ns


    Original     		PDF MX29F1610A/B 16M-BIT 70/90/120ns MX29F1610 MX29F1610B MX29F1610A A14A

    MX29F1611

    Abstract: No abstract text available
    Text: INDEX PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64


    Original     		PDF MX29F1611 16M-BIT bytes/64 100uA 100/120/150ns PM0440 MX29F1611

    microcontroller based caller id by using 8051

    Abstract: sound activated based lcd message display 8051 0038a 8088 memory interface SRAM ECHO canceller IC ED11 ED12 ED13 MX93002 MX93032
    Text: MX93032 APPLICATION NOTE [M1 VERSION] 1.0 GENERAL DESCRIPTIONS echo cancellation and acoustical echo cancellation, etc. • The MX93032-M1 has built-in DSP mode and MCU mode. In DSP mode, users do not need external microprocessors and can effectively reduce the overall


    Original     		PDF MX93032 MX93032-M1 PM0689 microcontroller based caller id by using 8051 sound activated based lcd message display 8051 0038a 8088 memory interface SRAM ECHO canceller IC ED11 ED12 ED13 MX93002 MX93032

    Untitled

    Abstract: No abstract text available
    Text: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture


    OCR Scan     		PDF MX29F1610 120/150ns 150ms Int03/11/1998 44-PIN 48-PIN

    Untitled

    Abstract: No abstract text available
    Text: r a iU M — IWXIC FEATURES ì m y MX29F1611 1 6 M-BIT[2 M X 8 / 1 M X 1 6 ] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM • • • • • • 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns


    OCR Scan     		PDF MX29F1611 100/120/150ns 50/60/70ns 150ms det98 PM0440 44-PIN

    00F1H

    Abstract: No abstract text available
    Text: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles


    OCR Scan     		PDF MX29F1 100/120/150ns -100mA 100mA 100ns 00F1H