MwT GaAs Device Technology
Abstract: Gunn Diode gunn effect fet dro 10 ghz system on chip x-band x-band dro
Text: MicroWave Technology, Inc. GENERAL INFORMATION MwT’s GaAs Device Technology MicroWave Technology Inc. was established in 1982 by two senior technologists with years of hands-on experiences in Gallium Arsenide GaAs epitaxial material growth and microwave device design and processes.
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GaAs FET amplifer
Abstract: AW1218301N AW612304 AP45401 ph01 AL26501 AL618801 AW218201N AW26204 AW26201N
Text: MicroWave Technology, Inc. MICROWAVE AMPLIFIERS Standard Amplifier Capability MicroWave Technology, Inc. has been a leading manufacturer of high performance amplifiers since it was founded in 1982. MwT’s principal strengths are derived from an in-house quarter micron Gallium Arsenide device
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PH-01
GaAs FET amplifer
AW1218301N
AW612304
AP45401
ph01
AL26501
AL618801
AW218201N
AW26204
AW26201N
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Untitled
Abstract: No abstract text available
Text: MMA-022028-S7 2 - 20 GHz GaAs MMIC Medium Power Amplifier New Product Data Sheet March 2007 Features: • Frequency Range: 2 - 20 GHz • P1dB: 28 dBm • Psat: 29 dBm • Gain: 8.0 dB • Advanced 0.25 um AlGaAs / InGaAs PHEMT Technology with Excellent Reliability
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MMA-022028-S7
MMA-022028-S7
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7905 P
Abstract: S7 300 MMA-022028-S7 2645 MMIC
Text: MMA-022028-S7 2 - 20 GHz GaAs MMIC Medium Power Amplifier New Product Data Sheet March 2007 Features: • Frequency Range: 2 - 20 GHz • P1dB: 28 dBm • Psat: 29 dBm • Gain: 8.0 dB • Advanced 0.25 um AlGaAs / InGaAs PHEMT Technology with Excellent Reliability
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MMA-022028-S7
MMA-022028-S7
7905 P
S7 300
2645 MMIC
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mmic
Abstract: mwtinc MWT-A970 "Microwave Diodes" MWT-7 wirebond MIL-PRF-38534 fine leak MwT-LP770 MwT-170 LN-141510-H4
Text: hi-rel and space product screening MicroWave Technology An IXYS Company High-Reliability and Space-Reliability Screening Options Space Qualified Low Noise Amplifiers Model Pkg New Freq Linear Gain Gain Fitness Input RL Output RL GHz Typ (dB) Typ +/-(dB)
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LN-162315-H4
LN-141510-H4
LN-141526-H4
mmic
mwtinc
MWT-A970
"Microwave Diodes"
MWT-7 wirebond
MIL-PRF-38534 fine leak
MwT-LP770
MwT-170
LN-141510-H4
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Hi-Rel
Abstract: MIL-STD-781 MIL-STD-785 MIL-PRF-35834
Text: High-Rel and Space-Rel Screening Options Since 1985 MwT has shipped millions of units for use in Commercial, Industrial, Military and Space end-use environments. MwT prides itself on its quality of product and workmanship. MwT’s workmanship standards are derived
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MIL-STD-883,
MIL-STD-883.
Hi-Rel
MIL-STD-781
MIL-STD-785
MIL-PRF-35834
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MMA-012030
Abstract: MVl408 Traveling Wave Amplifier
Text: MMA-012030 0.1-20GHz 1W Traveling Wave Amplifier Data Sheet October 2012 Features: • Frequency Range: 0.1 – 20 GHz P3dB: +29 dBm Gain: 12.5 dB Vdd =12 V Ids =500 mA Input and Output Fully Matched to 50 Ω Die size: 2350 x 1050 x 50 um
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MMA-012030
1-20GHz
MMA-012030
20GHz
MVl408
Traveling Wave Amplifier
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MwT-273
Abstract: mwt 871 MwT-270 sii 021 s-parameter MWT273HP
Text: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL7GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally
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QQQ0S51
MwT-273
mwt 871
MwT-270
sii 021
s-parameter
MWT273HP
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lg 5528
Abstract: No abstract text available
Text: MwT-6 GaAs FET DEVICE PRELIMINARY M IC R O W A V E TECHNOLOGY MICROWAVE 4268Solar Way; Fremont,. CA 94538 415-651-6700 FAX 415-651-2208 TECHNOLOGY 37E D blSMlüQ GQDGÜ3S S MRUV FEATURES • 0.3 MICRON REFRACTORY METAL/GOLD GATE • AIR BRIDGE TECHNOLOGY • DIAMOND-UKE CARBON DLC PASSIVATION
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4268Solar
lg 5528
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Untitled
Abstract: No abstract text available
Text: MwT-8 GaAs FET DEVICE . iM ic r o Wave Techno lo g y 4268 Solar Way Fremont, ÇA 94538 415-651-6700 FAX 415-651-2208. MICROIilAVE TECHNOLOGY 1 -/» , 37E D iEiEiEEEEIiroi 1- - 1 3- *- 125 0.3 M ICRON REFRACTORY METAL/Au GATES ’• A! 3“ u w uj y u 1;
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l241GD
Q0GQ04S
140ID
125-to
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MwT-470
Abstract: 12GHZ
Text: MwT-470 GN/SN/LN 12 GHz LOW NOISE PACKAGED GaAs FET DEVICE M ic r o W Te ave c h n o lo g y niCRO W A VE 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TECHNOLOGY 4SE blE41QD D DGGG157 riRliJ V b?t OUTLINE 70 [ Units in Inches and (mm ] 0.20
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MwT-470
bl241QD
12GHZ
12GHz
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MwT-770
Abstract: HP 3379
Text: -l= - '3 - 2 S MwT-770 G P /LN /H P 12 GHz LOW NOISE PACKAGED GaAs FET DEVICE M icro W a VE T E C H N O L O G Y niCROUAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX510-651-2208 MAE D blHMlDD D D D D I S T 4 4 T • ■ PIRlilV OUTUNE 70
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MwT-770
5io-65i-67oo
12GHz
HP 3379
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Untitled
Abstract: No abstract text available
Text: MwT-12 GaAs FET DEVICE PRELIMINARY J \/IlC R O W A V E T E C H N O L O G Y 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 I MICROWAVE TECHNOLOGY _ _ I_ 37E D • 1,124100 OOOOQbB T B I M R U V T ta |-76- f— j • — »» IS'a' — -300- 1-81-1
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MwT-12
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ats 1138
Abstract: CA94538 MWT-970 hp 3101 dale 9407
Text: MWT-970 GP/LN/HP y-y ÊJL£ 2 GHz LOW NOISE 12 GHz HIGH POWER PACKAGED GaAs FET DEVICE ^ M IC R O W A V E T E C H N O L O G Y MICROülAVE TECHNOLOGY 4268 Solar Wày Fremont, C A 94538 415-651-6700 FAX 415-651*2208 37E D • blSMlDÜ GGG0QS3 7 BMRIilV *7“ 3 J-
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MWT-970
CA94538
ats 1138
hp 3101
dale 9407
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Untitled
Abstract: No abstract text available
Text: MI CR O W A V E T E C H N O L O G Y bhE D • b l E M l G G Q D 0 D E T 2 bSl ■ H R W V MwT-10 GN / SN / LN 40 GHz Low Noise GaAs FET DEVICE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 FEATURES 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT
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MwT-10
79CHIP
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Untitled
Abstract: No abstract text available
Text: MwT-S7 18 GHz High Gain, Low Noise GaAs FET MICROWAVE TECHNOLOGY n • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 250 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO
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Untitled
Abstract: No abstract text available
Text: NICROIilAVE TECHNOLOGY J> bbE L1241DO D 0 0 QE 4 2 02b MRIilV MwT - A3 26 GHz High Gain, Low Noise GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +20 DBM OUTPU T POW ER AT 12 GHZ • 11 DB SM ALL SIG N AL GAIN AT 12 GHZ
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L1241DO
-F38-
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Untitled
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE usvt I- r m blEMlOQ 00D023A LTS • PIRUV w T - 3 26 GHz High Power GaAs FET 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES r —7Pr l «* ■ M MicroWave Technology t » • +21 DBM OUTPUT POWER AT 12 GHZ
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00D023Ã
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Untitled
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE D • L.1241DD DDDD3DG 5 5 6 ■ NRblV MwT -12 GP / SP / HP 18GHz HIGH POWER GaAs FETCHIP kàâ kM MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • 0.5 WATT POWER OUTPUT AT 12 GHZ • +37 dBm THIRD ORDER INTERCEPT
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1241DD
18GHz
MwT-12
-F94-
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Untitled
Abstract: No abstract text available
Text: MwT -12 GP / SP / HP M k B m Micro Wave Technology - • t , J- 18GHz HIGH POWER GaAs FETCHIP 4268Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651 2208 1 FEATURES 10 < > n rm n • 0.5 WATT POWER OUTPUT AT 12 GHZ • +37 dBm THIRD ORDER INTERCEPT
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18GHz
4268Solar
MwT-12
FAX510-651-2208
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A773
Abstract: sk 1413 FET mwt-A770
Text: MwT - A7 18 GHz High Gain, Low Noise GaAs FET Microwave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPLICATIONS
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MwT-A773
A773
sk 1413 FET
mwt-A770
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Untitled
Abstract: No abstract text available
Text: MwT - A3 26 GHz High Gain, Low Noise GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES rr • +20 DBM OUTPU T POW ER AT 12 GHZ 79 - i • 11 DB SM A LL SIG N A L GAIN A T 12 GHZ *41 —7»T • 0 .3 M ICRON R EFRACTO RY M E T A L /G O L D
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MwT-A373
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AX5101
Abstract: No abstract text available
Text: PRODUCT SELECTION GUIDE M ic r o w a v e GALUUM ARSENIDE FIELD EFFECT TRANSISTORS 100 MHz TO 40 GHz tec h no lo g y ABOUT MwT MwT is located in the heart of California’s Silicon Valley in 3 0 ,0 0 0 square feet of m odern fa c ilitie s d e d ic a te d to the
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MwT-10
MwT-11
MwT-13
MwT-14
MwT-15
MwT-16
241X775
241X407
241X356
AX5101
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MWT370HP
Abstract: IAM F30 371 fet MwT-373
Text: MwT - 3 26 GHz High Power GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FA X 510-651-2208 FEATURES rr n c: — • +21 DBM OUTPUT POWER AT 12 GHZ T n — 4 t« • 11 DB SMALL SIGNAL GAIN AT 12 GHZ 7t „J U J.L U •0.3 MICRON REFRACTORY METAL/GOLD GATE
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