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    MW6IC1940GNBR1 Search Results

    MW6IC1940GNBR1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MW6IC1940GNBR1 Freescale Semiconductor RF Amplifiers, RF/IF and RFID, IC POWER AMP RF TO-272-16 GW Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This


    Original
    PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 28cers,

    AN1977

    Abstract: AN1987 AN3263 J1213 MW6IC1940NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-1 Rev. 3.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original
    PDF MW6IC1940N--1 MW6IC1940GNB MW6IC1940GNBR1 AN1977 AN1987 AN3263 J1213 MW6IC1940NBR1

    CRCW12064701FKTA

    Abstract: a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22 MW6IC1940NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 1, 1/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This


    Original
    PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940NBR1 CRCW12064701FKTA a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22

    AN1907

    Abstract: AN1977 AN1987 MW6IC1940NB MW6IC1940NBR1 1329A-03 AN3789 J1213
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-2 Rev. 4.1, 12/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage


    Original
    PDF MW6IC1940N--2 MW6IC1940NB MW6IC1940NBR1 AN1907 AN1977 AN1987 MW6IC1940NBR1 1329A-03 AN3789 J1213

    AN3263

    Abstract: MW6IC1940NBR1 AN1977 AN1987 j642 J1213 MW6IC1940NB
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940NB/GNB wideband integrated circuit is designed with on- chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical


    Original
    PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940NBR1 AN3263 AN1977 AN1987 j642 J1213 MW6IC1940NB

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


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    PDF

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


    Original
    PDF

    MW6IC1940NB

    Abstract: A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J1213
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 ARCHIVE INFORMATION The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical


    Original
    PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940NBR1 MW6IC1940NB A114 A115 AN1977 AN1987 C101 JESD22 J1213

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 0, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This


    Original
    PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940N

    A113

    Abstract: A114 A115 AN1977 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original
    PDF MW6IC1940GNB MW6IC1940GNBR1 MW6IC1940N-1 A113 A114 A115 AN1977 AN1987 C101 JESD22

    MW6IC1940NB

    Abstract: A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J735
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N - 2 Rev. 4, 3/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage


    Original
    PDF MW6IC1940N MW6IC1940NB MW6IC1940NBR1 MW6IC1940N-2 A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J735