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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TOSHIBA MICROW AVE POWER GaAs FET TIM1112-8 internally Matched Power G aAs FETs X, Ku-Band Features * High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz * High gain G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	PDF	TIM1112-8 2-11C1B) MW50200196 MW5O2O0196

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: TOSHIBA MICROW AVE POWER GaAs FET TIM1112-8 internally Matched Power G aAs FETs X, Ku-Band Features * High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz * High gain G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package

OCR Scan

PDF

TIM1112-8 2-11C1B) MW50200196 MW5O2O0196