Untitled
Abstract: No abstract text available
Text: TOSHIBA TIM7984-14L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.0 dBm at 7.9 GHz to 8.4 GHz
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MW51150196
TIM7984-14L
2-16G1B)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7984-14L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-|dB = 42.0 dBm at 7.9 GHz to 8.4 GHz
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OCR Scan
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PDF
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TIM7984-14L
2-16G1B)
MW51150196
QGS27Qb
M7984-141Power
T0R75SG
0G227DÃ
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TIM7984-14L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -43 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 42.0 d B m at 7.9 G H z to 8 .4 G H z
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OCR Scan
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PDF
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TIM7984-14L
2-16G1B)
MW51150196
TIM7984-141Power
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