Untitled
Abstract: No abstract text available
Text: TOSHIBA TIM7785-16SL MICROWAVE POWER GaAs FET PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, Single Carrier Level • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz
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Original
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PDF
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TIM7785-16SL
2-16G1B)
MW51130196
TIM7785-16SL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r
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OCR Scan
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PDF
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TIM7785-16SL
MW51130196
TIM7785-16SL
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, Single Carrier Level • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz
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OCR Scan
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PDF
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TIM7785-16SL
TIM7785-16SL
MW51130196
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