TIM7179-16L
Abstract: No abstract text available
Text: TOSHIBA TIM7179-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.1 GHz to 7.9 GHz
|
Original
|
PDF
|
TIM7179-16L
2-16G1B)
MW51030196
TIM7179-16L
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power * P-idB = 42 dBm at 7.1 GHz to 7.9 GHz
|
OCR Scan
|
PDF
|
TIM7179-16L
MW51030196
DD22SÃ
TIM7179-16L
T0T7250
00225A4
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -42 d B c at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.1 GHz to 7.9 GHz
|
OCR Scan
|
PDF
|
7179-16L
MW51030196
TIM7179-16L
TIM7179-16L
|