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    TIM6472-30L

    Abstract: No abstract text available
    Text: TOSHIBA TIM6472-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 44.5 dBm at 6.4 GHz to 7.2 GHz


    Original     		PDF TIM6472-30L Pow25° 2-16G1B) MW50950196 TIM6472-30L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -43 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 4 4 .5 d B m at 6.4 G H z to 7.2 G H z


    OCR Scan     		PDF TIM6472-30L MW50950196