Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MW50880196 Search Results

    MW50880196 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tim6472-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM6472-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 6.4 GHz to 7.2 GHz • High gain - G1dB = 7.0 dB at 6.4 GHz to 7.2 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM6472-8 2-11D1B) MW50880196 TIM6472-8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROW AVE POWER GaAs FET TIM6472-8 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 6.4 G H z to 7.2 G H z • High gain - G 1dB = 7.0 d B at 6.4 G Hz to 7.2 G H z • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM6472-8 MW50880196 TIM6472-8 00225b!