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    TIM6472-7L

    Abstract: No abstract text available
    Text: TOSHIBA TIM6472-7L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 39 dBm at 6.4 GHz to 7.2 GHz


    Original     		PDF TIM6472-7L 2-11D1B) MW50870196 TIM6472-7L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 dB c at Po = 28.5 dBm, - Single carrier level • High power - P idB = 39 dBm at 6.4 GHz to 7.2 GHz


    OCR Scan     		PDF TIM6472-7L 2-11D1B) at260 MW50870196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, - Single carrier level • High power - P-|dB = 39 dBm at 6.4 GHz to 7.2 GHz


    OCR Scan     		PDF TIM6472-7L 2-11D1B) TCH7E50 Q0EES54 MW50870196