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    TIM6472-4L

    Abstract: TIM5964-4L
    Text: TOSHIBA TIM6472-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 6.4 GHz to 7.2 GHz • High gain


    Original     		TIM6472-4L 2-11D1B) MW50850196 TIM5964-4L TIM6472-4L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P ld B = 36 dBm at 6.4 GHz to 7.2 GHz


    OCR Scan     		TIM6472-4L MW50850196 CH72SD 0Q22547 TIM5964-4L TCH7250 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P i dB = 36 dBm at 6.4 GHz to 7.2 GHz


    OCR Scan     		TIM6472-4L MW50850196 5964-4L PDF