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    TIM5359-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM5359-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 8.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM5359-8 2-11D1B) MW50660196 TIM5359-8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM5359-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P-idB = 39 dBm at 5.3 GHz to 5.9 GHz • High gain - G idB = 8.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM5359-8 TIM5359-8 MW50660196