Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MW50650196 Search Results

    MW50650196 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIM5359-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM5359-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 9.0 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM5359-4 2-11D1B) MW50650196 TIM5359-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-4 Internally Matched Power GaAs FETs C-Band Features • High power - Pi(jB = 36.0 dBm at 5.3 GHz to 5.9 GHz • High gain - GldB = 9.0 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM5359-4 MW50650196 TIM5359-4 1D172S0