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    TIM5053-30L

    Abstract: No abstract text available
    Text: TOSHIBA TIM5053-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 5.0 GHz to 5.3 GHz


    Original     		PDF TIM5053-30L 2-16G1B) MW50640196 TIM5053-30L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 dB c at Po = 34.5 dBm, - Single carrier level • High power - P idB = 45 dBm at 5.0 GHz to 5.3 GHz


    OCR Scan     		PDF TIM5053-30L 2-16G1B) at260 MW50640196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power • PidB = 45 dBm at 5.0 GHz to 5.3 GHz


    OCR Scan     		PDF TIM5053-30L MW50640196 Q02241b