TIM5053-16L
Abstract: No abstract text available
Text: TOSHIBA TIM5053-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 5.0 GHz to 5.3 GHz
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TIM5053-16L
2-16G1B)
MW50630196
TIM5053-16L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P ide = 42.5 dBm at 5.0 GHz to 5.3 GHz
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PDF
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TIM5053-16L
MW50630196
M5053-16L
372S0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 4 2 .5 d B m at 5.0 G H z to 5 .3 G H z
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OCR Scan
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PDF
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TIM5053-16L
2-16G1B)
MW50630196
TIM5053-161Power
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