Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MW50610196 Search Results

    MW50610196 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIM5053-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM5053-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 5.0 GHz to 5.3 GHz • High gain - G1dB = 9.0 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM5053-8 2-11D1B) MW50610196 TIM5053-8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-8 Internally Matched Power GaAs FETs C-Band Features • High power • PidB = 39 dBm at 5.0 GHz to 5.3 GHz • High gain - G-idB = 9.0 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM5053-8 2-11D1B) MW50610196 Q022M21 DD22422