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    TIM5053-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM5053-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 5.0 GHz to 5.3 GHz • High gain - G1dB = 9.5 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM5053-4 2-11D1B) MW50600196 TIM5053-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 5.0 GHz to 5.3 GHz • High gain - G idB = 9.5 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		TIM5053-4 2-11D1B) MW50600196 PDF