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    TIM4450-4L

    Abstract: No abstract text available
    Text: TOSHIBA TIM4450-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 4.4 GHz to 5.0 GHz • High gain


    Original     		TIM4450-4L 2-11D1B) MW50500196 TIM4450-4L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power ' P-idB = 36 dBm at 4.4 G H z to 5.0 GHz


    OCR Scan     		TIM4450-4L TIM4450-4L MW50500196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM4450-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 4.4 GHz to 5.0 GHz


    OCR Scan     		TIM4450-4L MW50500196 4450-4L PDF