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    TIM3742-30L

    Abstract: No abstract text available
    Text: TOSHIBA TIM3742-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 3.7 GHz to 4.2 GHz


    Original     		PDF TIM3742-30L 2-16G1B) MW50480196 TIM3742-30L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 34.5 dBm, - Single carrier level • High power • P-idB = 45 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		PDF TIM3742-30L 95GHz MW50480196 TIM3742-30L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - pidB = 45 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		PDF TIM3742-30L t17250 TIM3742-30L MW50480196 CI02235b