TIM3742-4L
Abstract: No abstract text available
Text: TOSHIBA TIM3742-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz • High gain
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TIM3742-4L
2-11D1B)
MW50430196
TIM3742-4L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz
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OCR Scan
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PDF
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TIM3742-4L
MW50430196
3742-4L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz
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OCR Scan
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PDF
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TIM3742-4L
MW50430196
TIM3742-4L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level •H ig h power - P idB = 36 dBm at 3.7 GHz to 4.2 GHz
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OCR Scan
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PDF
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TIM3742-4L
95GHz
MW50430196
TIM3742-4L
DG223bl
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