TIM1414-15L
Abstract: No abstract text available
Text: TOSHIBA TIM1414-15L MICROWAVE POWER GaAs FET PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 30.0 dBm, Single Carrier Level • High power - P1dB = 42.0 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
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TIM1414-15L
2-11C1B)
MW50380196
TIM1414-15L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-15L PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 30.0 dBm, Single Carrier Level • High power - PldB = 42.0 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
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1414-15L
-131X
-115X
-142X
MW50380196
QQEE337
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-15L PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 30.0 dBm, Single Carrier Level • High power - P1dB = 42.0 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
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OCR Scan
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PDF
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1414-15L
-131J3
MW50380196
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