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TIM1414-15 Abstract: No abstract text available Text: TOSHIBA TIM1414-15 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =42.0 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package	Original	TIM1414-15 2-11C1B) MW50370196 Tim1414-15S-Parameters TIM1414-15	PDF

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TIM1414-15

Abstract: No abstract text available
Text: TOSHIBA TIM1414-15 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =42.0 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package

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TIM1414-15 2-11C1B) MW50370196 Tim1414-15S-Parameters TIM1414-15

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