TIM1414-10LA
Abstract: No abstract text available
Text: TOSHIBA TIM1414-10LA MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
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TIM1414-10LA
2-11C1B)
MW50360196
TIM1414-10LA
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TIM1414-10LA
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET T IM 1 4 1 4 -1 0 L A Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
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MW50360196
TIM1414-10LA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-10LA Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
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OCR Scan
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PDF
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TIM1414-10LA
Inte80
MW50350196
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