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    TIM1414

    Abstract: TIM1414-10A
    Text: TOSHIBA TIM1414-10A MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package


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    TIM1414-10A 2-11C1B) MW50340196 Tim1414-10A TIM1414 PDF