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    TIM1414-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM1414-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1414-8 2-11C1B) MW50310196 Tim1414-10S-Parameters TIM1414-8 PDF