TIM1213-10
Abstract: No abstract text available
Text: TOSHIBA TIM1213-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package
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Original
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TIM1213-10
M1213-10
2-11C1B)
MW50260196
TIM1213-10
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package
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OCR Scan
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TIM1213-10
2-11C1B)
MW50260196
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package
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OCR Scan
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TIM1213-10
2-11C1B)
MW50260196
|
PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - GidB - 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package
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OCR Scan
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TIM1213-10
2-11C1B)
1213-10L
TD1725D
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PDF
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