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    TIM1213-4L

    Abstract: No abstract text available
    Text: TOSHIBA TIM1213-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz


    Original     		PDF TIM1213-4L MW50230196 TIM1213-4L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz


    OCR Scan     		PDF TIM1213-4L MW50230196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz


    OCR Scan     		PDF TIM1213-4L MW50230196 TCH72SD