TIM1112-8
Abstract: No abstract text available
Text: TOSHIBA TIM1112-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package
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Original
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TIM1112-8
2-11C1B)
MW50200196
TIM1112-8
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROW AVE POWER GaAs FET TIM1112-8 internally Matched Power G aAs FETs X, Ku-Band Features * High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz * High gain G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package
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OCR Scan
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TIM1112-8
2-11C1B)
MW50200196
MW5O2O0196
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package
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OCR Scan
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TIM1112-8
2-11C1B)
MW50200196
|
PDF
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