Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MW50180196 Search Results

    MW50180196 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIM1112-2

    Abstract: No abstract text available
    Text: TOSHIBA TIM1112-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1112-2 MW50180196 TIM1112-2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1112-2 MW50180196