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    TIM1011-10L

    Abstract: No abstract text available
    Text: TOSHIBA TIM1011-10L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29 dBm, - Single carrier level • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz


    Original     		PDF TIM1011-10L 2-11C1B) MW50150196 TIM1011-10L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-10L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - I M 3 = -45 d B c at Po = 29 dBm, - Single carrier level • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz


    OCR Scan     		PDF TIM1011-10L 2-11C1B) MW50150196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-10L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29 dBm, - Single carrier level • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz


    OCR Scan     		PDF TIM1011-10L TIM1011-10L MW50150196