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    TIM0910-5

    Abstract: toshiba fet
    Text: TOSHIBA TIM0910-5 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    Original     		TIM0910-5 MW50030196 TIM0910-5 toshiba fet PDF

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    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM0910-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM0910-5 MW50030196 PDF