TIM0910-4
Abstract: No abstract text available
Text: TOSHIBA TIM0910-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package
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Original
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TIM0910-4
MW50020196
TIM0910-4
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TIM0910-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package
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OCR Scan
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TIM0910-4
MW50020196
TIM0910-4
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PDF
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