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    TIM0910-2

    Abstract: No abstract text available
    Text: TOSHIBA TIM0910-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    Original     		TIM0910-2 MW50010196 TIM0910-2 PDF

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    Abstract: No abstract text available
    Text: TOSHIBA TIM0910-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G 1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM0910-2 TransconductaMW50010196 MW50010196 TIM0910-2 PDF