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    TNM1800-7

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TNM1800-7 High Power GaAs FETs L, S-Band Features • High power - P1dB = 39.5 dBm at 1.8 GHz • High gain - G1dB = 10.0 dB at 1.8 GHz • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics


    Original     		TNM1800-7 MW30010196 TNM1800-7 PDF

    mw3001

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TNM1800-7 High Power GaAs FETs L, S-Band Features • High power - P1dB = 39.5 dBm at 1.8 GHz • High gain - G idB = 10.0 dB at 1.8 GHz • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics


    OCR Scan     		TNM1800-7 MW3001 MW30010196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TNM1800-7 High Power GaAs FETs L, S-Band Features • High power - P 1dB = 3 9 .5 dBm at 1.8 G H z • High gain - G 1dB = 10 .0 dB at 1.8 G H z • Herm etically sealed p ack ag e RF Performance Specifications (Ta = 25° C)


    OCR Scan     		TNM1800-7 MW30010196 00Z2E5b D022257 PDF