TNM1800-7
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TNM1800-7 High Power GaAs FETs L, S-Band Features • High power - P1dB = 39.5 dBm at 1.8 GHz • High gain - G1dB = 10.0 dB at 1.8 GHz • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics
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Original
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TNM1800-7
MW30010196
TNM1800-7
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PDF
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mw3001
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TNM1800-7 High Power GaAs FETs L, S-Band Features • High power - P1dB = 39.5 dBm at 1.8 GHz • High gain - G idB = 10.0 dB at 1.8 GHz • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics
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OCR Scan
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TNM1800-7
MW3001
MW30010196
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TNM1800-7 High Power GaAs FETs L, S-Band Features • High power - P 1dB = 3 9 .5 dBm at 1.8 G H z • High gain - G 1dB = 10 .0 dB at 1.8 G H z • Herm etically sealed p ack ag e RF Performance Specifications (Ta = 25° C)
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OCR Scan
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TNM1800-7
MW30010196
00Z2E5b
D022257
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PDF
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