MW10150196 Search Results

MW10150196 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8892-AS Power GaAs FETs Chip Form Features • High power - P 1dB = 2 1 .0 dBm at f = 2 3 GHz • High gain - G1dB = 6 .5 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8892-AS JS889Z-AS 23GHz MW10150196 JS8892-AS i7250

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET JS8892-AS Power GaAs FETs Chip Form Features • High power - P 1dB = 2 1 .0 dBm at f = 2 3 GHz • High gain - G1dB = 6 .5 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

OCR Scan

PDF

JS8892-AS JS889Z-AS 23GHz MW10150196 JS8892-AS i7250