MW10140196 Search Results

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Text: TOSHIBA MICROWAVE POWER GaAs FET J S 8 8 5 6 -A S Power GaAs FETs Chip Form Features • High power - P 1dB = 3 3 .5 dBm at f = 14.5 G H z • High gain - G idB = 6 .5 dB at f = 14.5 G H z • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)